[1] |
Huo Guan-Zhong, Su Chao, Wang Ke, Ye Qing-Ying, Zhuang Bin, Chen Shui-Yuan, Huang Zhi-Gao.Magnetic field modulation of photocurrent in BiFeO3film. Acta Physica Sinica, 2023, 72(6): 067501.doi:10.7498/aps.72.20222053 |
[2] |
Bi Si-Han, Song Jian-Jun, Zhang Dong, Zhang Shi-Qi.A Ge-based dual channel rectified single ended Schottky barrier field effect transistor for 2.45 GHz microwave wireless energy transmission. Acta Physica Sinica, 2022, 71(20): 208401.doi:10.7498/aps.71.20220855 |
[3] |
Deng Xu-Liang, Ji Xian-Fei, Wang De-Jun, Huang Ling-Qin.First principle study on modulating of Schottky barrier at metal/4H-SiC interface by graphene intercalation. Acta Physica Sinica, 2022, 71(5): 058102.doi:10.7498/aps.71.20211796 |
[4] |
Yan Da-Wei, Tian Kui-Kui, Yan Xiao-Hong, Li Wei-Ran, Yu Dao-Xin, Li Jin-Xiao, Cao Yan-Rong, Gu Xiao-Feng.Forward current transport and noise behavior of GaN Schottky diodes. Acta Physica Sinica, 2021, 70(8): 087201.doi:10.7498/aps.70.20201467 |
[5] |
.First Principle Study on Modulating of Schottky Barrier at Metal/4H-SiC Interface by Graphene Intercalation. Acta Physica Sinica, 2021, (): .doi:10.7498/aps.70.20211796 |
[6] |
Yan Da-Wei, Wu Jing, Yan Xiao-Hong, Li Wei-Ran, Yu Dao-Xin, Cao Yan-Rong, Gu Xiao-Feng.Voltage and temperature dependence of reverse leakage current of lattice-matched InAlN/GaN heterostructure Schottky contact. Acta Physica Sinica, 2021, 70(7): 077201.doi:10.7498/aps.70.20201355 |
[7] |
Xu Feng1\2, Yu Guo-Hao, Deng Xu-Guang, Li Jun-Shuai, Zhang Li, Song Liang, Fan Ya-Ming, Zhang Bao-Shun.Current transport mechanism of Schottky contact of Pt/Au/n-InGaN. Acta Physica Sinica, 2018, 67(21): 217802.doi:10.7498/aps.67.20181191 |
[8] |
Zu Feng-Xia, Zhang Pan-Pan, Xiong Lun, Yin Yong, Liu Min-Min, Gao Guo-Ying.Design and electronic transport properties of organic thiophene molecular rectifier with the graphene electrodes. Acta Physica Sinica, 2017, 66(9): 098501.doi:10.7498/aps.66.098501 |
[9] |
Qi Jun-Jie, Xu Min-Xuan, Hu Xiao-Feng, Zhang Yue.Frabrication and properties of self-powered ultraviolet detectors based on one-demensional ZnO nanomaterials. Acta Physica Sinica, 2015, 64(17): 172901.doi:10.7498/aps.64.172901 |
[10] |
Zhang Lin, Xiao Jian, Qiu Yang-Zhang, Cheng Hong-Liang.Radition effect on Ti/4H-SiC SBD of gamma-ray,electrons and neutrons. Acta Physica Sinica, 2011, 60(5): 056106.doi:10.7498/aps.60.056106 |
[11] |
Sun Qin-Jun, Xu Zheng, Zhao Su-Ling, Zhang Fu-Jun, Gao Li-Yan, Tian Xue-Yan, Wang Yong-Sheng.Contact effect in organic thin film transistors. Acta Physica Sinica, 2010, 59(11): 8125-8130.doi:10.7498/aps.59.8125 |
[12] |
Wang Jin, Jiang Wen-Long, Hua Jie, Wang Guang-De, Han Qiang, Chang Xi, Zhang Gang.Influence of magnetic field on efficiency and current in Co-based organic light emitting diode. Acta Physica Sinica, 2010, 59(11): 8212-8217.doi:10.7498/aps.59.8212 |
[13] |
Xiu Ming-Xia, Ren Jun-Feng, Wang Yu-Mei, Yuan Xiao-Bo, Hu Gui-Chao.Effect of Schottky barrier on spin injection in ferromagnetic/organic semiconductor structure. Acta Physica Sinica, 2010, 59(12): 8856-8861.doi:10.7498/aps.59.8856 |
[14] |
Li Rong-Hua, Meng Wei-Min, Peng Ying-Quan, Ma Chao-Zhu, Wang Run-Sheng, Xie Hong-Wei, Wang Ying, Ye Zao-Chen.Investigation on the effect of cathode work function and exciton generation rate on the open-circuit voltage of single layer organic solar cell with Schottky contact. Acta Physica Sinica, 2010, 59(3): 2126-2130.doi:10.7498/aps.59.2126 |
[15] |
Liao Zai-Yi, Zhao Ling-Juan, Zhang Yun-Xiao, Bian Jing, Pan Jiao-Qing, Wang Wei.A method to analyze insertion loss of electroabsorption-modulator using photocurrent and power transmission vs.wavelength. Acta Physica Sinica, 2009, 58(5): 3135-3139.doi:10.7498/aps.58.3135 |
[16] |
Zhang Lin, Han Chao, Ma Yong-Ji, Zhang Yi-Men, Zhang Yu-Ming.Gamma-ray radiation effect on Ni/4H-SiC SBD. Acta Physica Sinica, 2009, 58(4): 2737-2741.doi:10.7498/aps.58.2737 |
[17] |
Wang Xin-Juan, Zhang Jin-Feng, Zhang Jin-Cheng, Hao Yue.Analysis of structure parameters and current conduction mechanisms of AlGaN/GaN Schottky contacts. Acta Physica Sinica, 2008, 57(5): 3171-3175.doi:10.7498/aps.57.3171 |
[18] |
Zhou Mei, Chang Qing-Ying, Zhao De-Gang.A new method to reduce the dark current of GaN based Schottky barrier ultraviolet photodetector. Acta Physica Sinica, 2008, 57(4): 2548-2553.doi:10.7498/aps.57.2548 |
[19] |
Feng Wei, Gao Zhong-Kuo.Simulation of physical properties of organic photovoltaic cell. Acta Physica Sinica, 2008, 57(4): 2567-2573.doi:10.7498/aps.57.2567 |
[20] |
Liu Jie, Hao Yue, Feng Qian, Wang Chong, Zhang Jin-Cheng, Guo Liang-Liang.Characterization of Ni/Au GaN Schottky contact base on I-V-T and C-V-T measurements. Acta Physica Sinica, 2007, 56(6): 3483-3487.doi:10.7498/aps.56.3483 |