[1] |
Zhang Yu-Qi, Wang Jun-Jie, Lü Zi-Yu, Han Su-Ting.Multimode modulated memristors for in-sensor computing system. Acta Physica Sinica, 2022, 71(14): 148502.doi:10.7498/aps.71.20220226 |
[2] |
Hu Wei, Liao Jian-Bin, Du Yong-Qian.An analytic modeling strategy for memristor cell applicable to large-scale memristive networks. Acta Physica Sinica, 2021, 70(17): 178505.doi:10.7498/aps.70.20210116 |
[3] |
Shi Chen-Yang, Min Guang-Zong, Liu Xiang-Yang.Research progress of protein-based memristor. Acta Physica Sinica, 2020, 69(17): 178702.doi:10.7498/aps.69.20200617 |
[4] |
Shao Nan, Zhang Sheng-Bing, Shao Shu-Yuan.Mathematical model of memristor with sensory memory. Acta Physica Sinica, 2019, 68(1): 018501.doi:10.7498/aps.68.20181577 |
[5] |
Zhu Lei-Jie, Wang Fa-Qiang.Design and analysis of new meminductor model based on Knowm memristor. Acta Physica Sinica, 2019, 68(19): 198501.doi:10.7498/aps.68.20190793 |
[6] |
Shao Nan, Zhang Sheng-Bing, Shao Shu-Yuan.Analysis of memristor model with learning-experience behavior. Acta Physica Sinica, 2019, 68(19): 198502.doi:10.7498/aps.68.20190808 |
[7] |
Yu Zhi-Qiang, Liu Min-Li, Lang Jian-Xun, Qian Kai, Zhang Chang-Hua.Resistive switching characteristics and resistive switching mechanism of Au/TiO2/FTO memristor. Acta Physica Sinica, 2018, 67(15): 157302.doi:10.7498/aps.67.20180425 |
[8] |
Xu Bi-Rong, Wang Guang-Yi.Meminductive Wein-bridge chaotic oscillator. Acta Physica Sinica, 2017, 66(2): 020502.doi:10.7498/aps.66.020502 |
[9] |
Shao Nan, Zhang Sheng-Bing, Shao Shu-Yuan.Modification of memristor model with synaptic characteristics and mechanism analysis of the model's learning-experience behavior. Acta Physica Sinica, 2016, 65(12): 128503.doi:10.7498/aps.65.128503 |
[10] |
Yuan Ze-Shi, Li Hong-Tao, Zhu Xiao-Hua.A digital-analog hybrid random number generator based on memristor. Acta Physica Sinica, 2015, 64(24): 240503.doi:10.7498/aps.64.240503 |
[11] |
Meng Fan-Yi, Duan Shu-Kai, Wang Li-Dan, Hu Xiao-Fang, Dong Zhe-Kang.An improved WOx memristor model with synapse characteristic analysis. Acta Physica Sinica, 2015, 64(14): 148501.doi:10.7498/aps.64.148501 |
[12] |
Yu Ya-Juan, Wang Zai-Hua.A fractional-order memristor model and the fingerprint of the simple series circuits including a fractional-order memristor. Acta Physica Sinica, 2015, 64(23): 238401.doi:10.7498/aps.64.238401 |
[13] |
Guo Yu-Quan, Duan Shu-Kai, Wang Li-Dan.Influence of length parameter on the characteristics of nanoscale titanium oxide memristor. Acta Physica Sinica, 2015, 64(10): 108502.doi:10.7498/aps.64.108502 |
[14] |
Yuan Fang, Wang Guang-Yi, Jin Pei-Pei.Study on dynamical characteristics of a meminductor model and its meminductor-based oscillator. Acta Physica Sinica, 2015, 64(21): 210504.doi:10.7498/aps.64.210504 |
[15] |
Wang Yan, Yang Jiu, Wang Li-Dan, Duan Shu-Kai.Research of coupling behavior based on series-parallel flux-controlled memristor. Acta Physica Sinica, 2015, 64(23): 237303.doi:10.7498/aps.64.237303 |
[16] |
Liu Dong-Qing, Cheng Hai-Feng, Zhu Xuan, Wang Nan-Nan, Zhang Chao-Yang.Research progress of memristors and memristive mechanism. Acta Physica Sinica, 2014, 63(18): 187301.doi:10.7498/aps.63.187301 |
[17] |
Xu Hui, Tian Xiao-Bo, Bu kai, Li Qing-Jiang.Influence of temperature change on conductive characteristics of titanium oxide memristor. Acta Physica Sinica, 2014, 63(9): 098402.doi:10.7498/aps.63.098402 |
[18] |
Tian Xiao-Bo, Xu Hui, Li Qing-Jiang.Influence of the cross section area on the conductive characteristics of titanium oxide memristor. Acta Physica Sinica, 2014, 63(4): 048401.doi:10.7498/aps.63.048401 |
[19] |
Jia Lin-Nan, Huang An-Ping, Zheng Xiao-Hu, Xiao Zhi-Song, Wang Mei.Progress of memristor modulated by interfacial effect. Acta Physica Sinica, 2012, 61(21): 217306.doi:10.7498/aps.61.217306 |
[20] |
Zhou Tie-Ge, Song Feng-Bin, Zuo Tao, Gu Jing, Xia Hou-Hai, Hu Ya-Ting, Zhao Xin-Jie, Fang Lan, Yan Shao-Lin.The model of capacitively coupled intrinsic Josephson junction array and its chaotic behavior. Acta Physica Sinica, 2007, 56(11): 6307-6314.doi:10.7498/aps.56.6307 |