| [1] |
Ma Teng-Yu, Li Wan-Jun, He Xian-Wang, Hu Hui, Huang Li-Juan, Zhang Hong, Xiong Yuan-Qiang, Li Hong-Lin, Ye Li-Juan, Kong Chun-Yang.Size Regulation and Photoluminescence Properties ofβ-Ga2O3Nanomaterials. Acta Physica Sinica, 2020, 69(10): 108102.doi:10.7498/aps.69.20200158 |
| [2] |
Wang Qiang, Yang Li-Xue, Liu Bei-Yun, Yan Yin-Zhou, Chen Fei, Jiang Yi-Jian.Thermal regulation mechanism of photoluminescence in intrinsic acceptor-rich ZnO microtube. Acta Physica Sinica, 2020, 69(19): 197701.doi:10.7498/aps.69.20200655 |
| [3] |
Liu Zi, Zhang Heng, Wu Hao, Liu Chang.Enhancement of photoluminescence from zinc oxide by aluminum nanoparticle surface plasmon. Acta Physica Sinica, 2019, 68(10): 107301.doi:10.7498/aps.68.20190062 |
| [4] |
Chen Long, Chen Cheng-Ke, Li Xiao, Hu Xiao-Jun.Effects of oxidation on silicon vacancy photoluminescence and microstructure of separated domain formed nanodiamond films. Acta Physica Sinica, 2019, 68(16): 168101.doi:10.7498/aps.68.20190422 |
| [5] |
Zhu Wei-Jun, Chen Jin-Xin, Gao Yu-Han, Yang De-Ren, Ma Xiang-Yang.Electroluminescence from silicon-based light-emitting device with erbium-doped TiO2films: Enhancement effect of ytterbium codoping. Acta Physica Sinica, 2019, 68(12): 124204.doi:10.7498/aps.68.20190300 |
| [6] |
Zhu Min, Li Xiao-Hong, Li Guo-Qiang, Chang Li-Yang, Xie Chang-Xin, Qiu Rong, Li Jia-Wen, Huang Wen-Hao.Photoluminescence of monocrystalline silicon irradiated by femtosecond pulsed laser. Acta Physica Sinica, 2014, 63(5): 057801.doi:10.7498/aps.63.057801 |
| [7] |
Wei Xiao-Xu, Cheng Ying, Huo Da, Zhang Yu-Han, Wang Jun-Zhuan, Hu Yong, Shi Yi.PL enhancement of MoS2 by Au nanoparticles. Acta Physica Sinica, 2014, 63(21): 217802.doi:10.7498/aps.63.217802 |
| [8] |
Fang He, Wang Shun-Li, Li Li-Qun, Li Pei-Gang, Liu Ai-Ping, Tang Wei-Hua.Synthesis and photoluminescence of ZnO and Zn/ZnOnanoparticles prepared by liquid-phase pulsed laser ablation. Acta Physica Sinica, 2011, 60(9): 096102.doi:10.7498/aps.60.096102 |
| [9] |
Zheng Li-Ren, Huang Bai-Biao, Wei Ji-Yong.Preparation of SiOx nanowires in different atmosphere, their morphology, PL and FTIR properties. Acta Physica Sinica, 2009, 58(4): 2306-2312.doi:10.7498/aps.58.2306 |
| [10] |
Li Su-Mei, Song Shu-Mei, Lü Ying-Bo, Wang Ai-Fang, Wu Ai-Ling, Zheng Wei-Min.Photoluminescence study of quantum confined acceptors. Acta Physica Sinica, 2009, 58(7): 4936-4940.doi:10.7498/aps.58.4936 |
| [11] |
Miao Jing-Wei, Wang Pei-Lu, Zhu Zhou-Sen, Yuan Xue-Dong, Wang Hu, Yang Chao-Wen, Shi Mian-Gong, Miao Lei, Sun Wei-Li, Zhang Jing, Liao Xue-Hua.Photoluminescence spectrum of monocrystalline Si implanted by nitrogen cluster ions. Acta Physica Sinica, 2008, 57(4): 2174-2178.doi:10.7498/aps.57.2174 |
| [12] |
Ma Hai-Lin, Su Qing, Lan Wei, Liu Xue-Qin.Influence of oxygen pressure on the structure and photoluminescence of β-Ga2O3 nano-material prepared by thermal evaporation. Acta Physica Sinica, 2008, 57(11): 7322-7326.doi:10.7498/aps.57.7322 |
| [13] |
Yu Wei, Li Ya-Chao, Ding Wen-Ge, Zhang Jiang-Yong, Yang Yan-Bin, Fu Guang-Sheng.Bonding configurations and photoluminescence of amorphous Si nanoparticles in SiNx films. Acta Physica Sinica, 2008, 57(6): 3661-3665.doi:10.7498/aps.57.3661 |
| [14] |
Tang Bin, Deng Hong, Shui Zheng-Wei, Wei Min, Chen Jin-Ju, Hao Xin.Room-temperature optical properties of Al-doped ZnO nanowires array. Acta Physica Sinica, 2007, 56(9): 5176-5179.doi:10.7498/aps.56.5176 |
| [15] |
Yao Zhi-Tao, Sun Xin-Rui, Xu Hai-Jun, Jiang Wei-Fen, Xiao Shun-Hua, Li Xin-Jian.The structure and photoluminescence properties of ZnO/silicon nanoporous pillar array. Acta Physica Sinica, 2007, 56(10): 6098-6103.doi:10.7498/aps.56.6098 |
| [16] |
Wang Ying-Long, Lu Li-Fang, Yan Chang-Yu, Chu Li-Zhi, Zhou Yang, Fu Guang-Sheng, Peng Ying-Cai.The laser ablated deposition of Si nanocrystalline film with narrow photoluminescence peak. Acta Physica Sinica, 2005, 54(12): 5738-5742.doi:10.7498/aps.54.5738 |
| [17] |
Xu Da-Yin, Liu Yan-Ping, He Zhi-Wei, Fang Ze-Bo, Liu Xue-Qin, Wang Yin-Yue.The behavior of photoluminescence from SiC:Tb films deposited on porous silicon substrate. Acta Physica Sinica, 2004, 53(8): 2694-2698.doi:10.7498/aps.53.2694 |
| [18] |
Huang Kai, Wang Si-Hui, Shi Yi, Qin Guo-Yi, Zhang Rong, Zheng You-Dou.Effect of inner electric field on the photoluminescence spectrum of nanosilicon. Acta Physica Sinica, 2004, 53(4): 1236-1242.doi:10.7498/aps.53.1236 |
| [19] |
Zhang Xi-Tian, Xiao Zhi-Yan, Zhang Wei-Li, Gao Hong, Wang Yu-Xi, Liu Yi-Chun, Zhang Ji-Ying, Xu Wu.A study on photoluminescence characterization of high-quality nanocrystalline ZnO thin films. Acta Physica Sinica, 2003, 52(3): 740-744.doi:10.7498/aps.52.740 |
| [20] |
MA SHU-YI, QIN GUO-GANG, YOU LI-PING, WANG YIN-YUE.COMPARATIVE STUDY ON PHOTOLUMINESCENCE FROM Si-CONTAINING SILICON OXIDE FILMS AND Ge-CONTAINING SILICON OXIDE FILMS. Acta Physica Sinica, 2001, 50(8): 1580-1584.doi:10.7498/aps.50.1580 |
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