High-quality VO2 thin films are deposited on the metal platinum (Pt) electrode buffered by silicon dioxide (SiO2) using radio frequency magnetron sputtering. The effect of the thickness of SiO2 on the the crystal structure, morphology and metal-insulator transition (MIT) performance of the films are discussed. Results show that SiO2 buffer layer with a thickness of 0.2 μm can effectively eliminate huge stress between the VO2 film and the metal film; and the VO2 thin film with the distinct MIT are deposited. When the buffer layer reaches more than 0.7 μm, the VO2 film has a distinct (011) preferred orientation, the smooth surface and compact nanostructure, and the resistance change reaches more than three orders of magnitude. At the same time, Pt-SiO2/VO2-Au sandwiched structure is achieved to test the current versus voltage curves, in which can be seen several distinct steps of current caused by the voltage perpendicular to the plane of a VO2 film. The result confirms the electrically-driven metal-insulator transition. Due to the high-quality VO2 and the flexible device structure, the VO2/Pt-SiO2 can be widely used for large-scale integrated electronic control devices.