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Wang Bo, Zhang Ji-Hong, Li Cong-Ying.Enhancement of near-field thermal radiation of semiconductor vanadium dioxide covered by graphene. Acta Physica Sinica, 2021, 70(5): 054207.doi:10.7498/aps.70.20201360 |
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Zhang Meng, Yao Ruo-He, Liu Yu-Rong, Geng Kui-Wei.Shot noise model of the short channel metal-oxide-semiconductor field-effect transistor. Acta Physica Sinica, 2020, 69(17): 177102.doi:10.7498/aps.69.20200497 |
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Yang Pei-Di, Ouyang Chen, Hong Tian-Shu, Zhang Wei-Hao, Miao Jun-Gang, Wu Xiao-Jun.Study of phase transition of single crystal and polycrystalline vanadium dioxide nanofilms by using continuous laser pump-terahertz probe technique. Acta Physica Sinica, 2020, 69(20): 204205.doi:10.7498/aps.69.20201188 |
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Sun Xiao-Ning, Qu Zhao-Ming, Wang Qing-Guo, Yuan Yang, Liu Shang-He.Research progress of metal-insulator phase transition in VO2induced by electric field. Acta Physica Sinica, 2019, 68(10): 107201.doi:10.7498/aps.68.20190136 |
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Wang Pan-Pan, Zhang Yu-Zhi, Peng Ming-Dong, Zhang Yun-Long, Wu Ling-Nan, Cao Yun-Zhen, Song Li-Xin.Spectroscopic ellipsometry analysis of vanadium oxide film in Vis-NIR and NIR-MIR. Acta Physica Sinica, 2016, 65(12): 127201.doi:10.7498/aps.65.127201 |
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Xiong Ying, Wen Qi-Ye, Tian Wei, Mao Qi, Chen Zhi, Yang Qing-Hui, Jing Yu-Lan.Researches on the electrical properties of vanadium oxide thin films on Si substrates. Acta Physica Sinica, 2015, 64(1): 017102.doi:10.7498/aps.64.017102 |
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Zhou Chun-Yu, Zhang He-Ming, Hu Hui-Yong, Zhuang Yi-Qi, Lü Yi, Wang Bin, Wang Guan-Yu.Charge model of strained Si NMOSFET. Acta Physica Sinica, 2014, 63(1): 017101.doi:10.7498/aps.63.017101 |
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Qiu Dong-Hong, Wen Qi-Ye, Yang Qing-Hui, Chen Zhi, Jing Yu-Lan, Zhang Huai-Wu.Growth of vanadium dioxide thin films on Pt metal film and the electrically-driven metal–insulator transition characteristics of them. Acta Physica Sinica, 2013, 62(21): 217201.doi:10.7498/aps.62.217201 |
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Gao Wang, Hu Ming, Hou Shun-Bao, Lü Zhi-Jun, Wu Bin.Preparation of vanadium oxide thin films by oxidation with rapid thermal processing. Acta Physica Sinica, 2013, 62(1): 018104.doi:10.7498/aps.62.018104 |
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He Qiong, Xu Xiang-Dong, Wen Yue-Jiang, Jiang Ya-Dong, Ao Tian-Hong, Fan Tai-Jun, Huang Long, Ma Chun-Qian, Sun Zi-Qiang.Growth mechanism and optoelectronic properties of vanadium oxide films prepared by Sol-Gel. Acta Physica Sinica, 2013, 62(5): 056802.doi:10.7498/aps.62.056802 |
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Wei Xiao-Ying, Hu Ming, Zhang Kai-Liang, Wang Fang, Liu Kai.Micro-structural and resistive switching properties of vanadium oxide thin films. Acta Physica Sinica, 2013, 62(4): 047201.doi:10.7498/aps.62.047201 |
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Cao Lei, Liu Hong-Xia, Wang Guan-Yu.Study of modeling for hetero-materiel gate fully depleted SSDOI MOSFET. Acta Physica Sinica, 2012, 61(1): 017105.doi:10.7498/aps.61.017105 |
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Sun Peng, Du Lei, Chen Wen-Hao, He Liang, Zhang Xiao-Fang.A radiation degradation model of metal-oxide-semiconductor field effect transistor. Acta Physica Sinica, 2012, 61(10): 107803.doi:10.7498/aps.61.107803 |
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Wu Bin, Hu Ming, Hou Shun-Bao, Lü Zhi-Jun, Gao Wang, Liang Ji-Ran.Preparation and characteristic of phase transition vanadium oxide thin films by rapid thermal process. Acta Physica Sinica, 2012, 61(18): 188101.doi:10.7498/aps.61.188101 |
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He Bao-Ping, Yao Zhi-Bin.Research on prediction model of radiation effect for complementary metal oxide semiconductor devices at low dose rate irradiation in space environment. Acta Physica Sinica, 2010, 59(3): 1985-1990.doi:10.7498/aps.59.1985 |
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Wang Chang-Lei, Tian Zhen, Xing Qi-Rong, Gu Jian-Qiang, Liu Feng, Hu Ming-Lie, Chai Lu, Wang Qing-Yue.Photo-induced insulator-metal transition of silicon-based VO2 nanofilm by THz time domain spectroscopy. Acta Physica Sinica, 2010, 59(11): 7857-7862.doi:10.7498/aps.59.7857 |
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Chen Jun, He Jie, Lin Li-Bin, Song Ting-Ting.The theoretical study of metal-insulator transition of VO2. Acta Physica Sinica, 2010, 59(9): 6480-6486.doi:10.7498/aps.59.6480 |
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Pan Meng-Xiao, Cao Xing-Zhong, Li Yang-Xian, Wang Bao-Yi, Xue De-Sheng, Ma Chuang-Xin, Zhou Chun-Lan, Wei Long.Microstructural features of DC sputtered vanadium oxide thin films. Acta Physica Sinica, 2004, 53(6): 1956-1960.doi:10.7498/aps.53.1956 |
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LI DAN-ZHI.SPECTRAL TRANSMISSION AND REFLECTION OF THE DOPING SEMICONDUCTOR/METAL FILMS SYSTEMS. Acta Physica Sinica, 1999, 48(12): 2349-2356.doi:10.7498/aps.48.2349 |
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CHHN FENG, YING HE-PING, XU TIE-FENG, LI WEN-ZHU.INSULATOR-METAL TRANSITION OF THE 2-D HALF-FILLED HUBBARD MODEL AT FINITE-TEMPERATURES. Acta Physica Sinica, 1994, 43(10): 1672-1676.doi:10.7498/aps.43.1672 |
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