XIE Zhipeng; ZHANG Da; LIANG Feng

doi:10.7498/aps.74.20251185

Abstract
Non-thermal plasma (NTP), as an advanced technology capable of efficiently synthesizing and modifying materials at near-ambient temperatures, has attracted significant attention in the field of energy materials in recent years. Owing to its high electron temperature and low bulk gas temperature, NTP can significantly enhance the electrochemical performance of electrode materials by creating vacancies, enabling heteroatom doping, and adjusting multiscale defects such as porosity and surface roughness, while preventing thermal damage. The plasma-material surface interaction is a complex system involving mutual influences between the plasma and the material. An in-depth understanding of this mechanism is essential for achieving precise control over defect type, density, and spatial distribution by modifying NTP . This paper systematically summarizes recent advances in the application of NTP for etching and doping energy materials, with special emphasis on the formation mechanisms of defects and their functional role in plasma-surface interactions. The plasma sheath effects, defect generation pathways, and the influence of material morphology on local plasma behavior are discussed in detail. Finally, this paper outlines prospects for future research on NTP-modified energy materials.

Keywords:
non-thermal plasma /

plasma-material surface interaction /

defects /

energy materials
FullText HTML

Cited By
DownLoad: Full-Size Img PowerPoint

DownLoad: Full-Size Img PowerPoint

DownLoad: Full-Size Img PowerPoint

DownLoad: Full-Size Img PowerPoint

DownLoad: Full-Size Img PowerPoint

DownLoad: Full-Size Img PowerPoint

DownLoad: Full-Size Img PowerPoint

化学键键能/eV 化学键键能/eV

C—H 3.2—4.7 C—C 2.6—5.2

N—H 2.1—4.7 C—O 0.95—3.0

C—N 1.2—3.1 C=C 3.3—7.5

C=O 5.5 O—H 3.4—5.2

DownLoad: CSV

map

[1]
[2]
[3]
[4]
[5]
[6]
[7]
[8]
[9]
[10]
[11]
[12]
[13]
[14]
[15]
[16]
[17]
[18]
[19]
[20]
[21]
[22]
[23]
[24]
[25]
[26]
[27]
[28]
[29]
[30]
[31]
[32]
[33]
[34]
[35]
[36]
[37]
[38]
[39]
[40]
[41]
[42]
[43]
[44]
[45]
[46]
[47]
[48]
[49]
[50]
[51]
[52]
[53]
[54]
[55]
[56]
[57]
[58]
[59]
[60]
[61]
[62]
[63]
[64]
[65]
[66]
[67]
[68]
[69]
[70]
[71]
[72]
[73]
[74]

[1]	Wang Jing, Gao Shan, Duan Xiang-Mei, Yin Wan-Jian. Influence of defect in perovskite solar cell materials on device performance and stability. Acta Physica Sinica, doi: 10.7498/aps.73.20231631
[2]	Cao Zhen, Hao Da-Peng, Tang Gang, Xun Zhi-Peng, Xia Hui. Influence of cluster shaped defects on fracture process of fiber bundle. Acta Physica Sinica, doi: 10.7498/aps.70.20210310
[3]	Cui Xing-Hua, Xu Qiao-Jing, Shi Biao, Hou Fu-Hua, Zhao Ying, Zhang Xiao-Dan. Research progress of wide bandgap perovskite materials and solar cells. Acta Physica Sinica, doi: 10.7498/aps.69.20200822
[4]	Yin Yuan, Li Ling, Yin Wan-Jian. Theoretical and computational study on defects of solar cell materials. Acta Physica Sinica, doi: 10.7498/aps.69.20200656
[5]	Huang Bing-Quan, Zhou Tie-Ge, Wu Dao-Xiong, Zhang Zhao-Fu, Li Bai-Kui. Properties of vacancies and N-doping in monolayer g-ZnO: First-principles calculation and molecular orbital theory analysis. Acta Physica Sinica, doi: 10.7498/aps.68.20191258
[6]	Liu Hao-Hua, Wang Shao-Hua, Li Bo-Bo, Li Hua-Lin. Defect induced asymmetric soliton transmission in the nonlinear circuit. Acta Physica Sinica, doi: 10.7498/aps.66.100502
[7]	Zhang Xiu-Zhi, Wang Kai-Yue, Li Zhi-Hong, Zhu Yu-Mei, Tian Yu-Ming, Chai Yue-Sheng. Effect of nitrogen on the defect luminescence in diamond. Acta Physica Sinica, doi: 10.7498/aps.64.247802
[8]	Zhang Ming-Lan, Yang Rui-Xia, Li Zhuo-Xin, Cao Xing-Zhong, Wang Bao-Yi, Wang Xiao-Hui. Study on proton irradiation induced defects in GaN thick film. Acta Physica Sinica, doi: 10.7498/aps.62.117103
[9]	Chen Xue-Qiong, Chen Zi-Yang, Pu Ji-Xiong, Zhu Jian-Qiang, Zhang Guo-Wen. Intensity distribution of the flat-topped beam propagating through the thick nonlinear medium with defects. Acta Physica Sinica, doi: 10.7498/aps.62.044213
[10]	Wang Xin-Hua, Pang Lei, Chen Xiao-Juan, Yuan Ting-Ting, Luo Wei-Jun, Zheng Ying-Kui, Wei Ke, Liu Xin-Yu. Investigation on trap by the gate fringecapacitance in GaN HEMT. Acta Physica Sinica, doi: 10.7498/aps.60.097101
[11]	Lu Guang-Xia, Zhang Hui, Zhang Guo-Ying, Liang Ting, Li Dan, Zhu Sheng-Long. Mechanism of the influence of the interaction between interstitial H atom and doped atom on the dehydrogenation performance of LiNH2. Acta Physica Sinica, doi: 10.7498/aps.60.117101
[12]	Zhang Hong-Liang, Lei Hai-Le, Tang Yong-Jian, Luo Jiang-Shan, Li Kai, Deng Xiao-Chen. Thermal capacity of nanocrystalline copper at low temperatures. Acta Physica Sinica, doi: 10.7498/aps.59.471
[13]	Xia Zhi-Lin, Shao Jian-Da, Fan Zheng-Xiu. Effect of bulk inclusion in films on damage probability. Acta Physica Sinica, doi: 10.7498/aps.56.400
[14]	Hao Xiao-Peng, Wang Bao-Yi, Yu Run-Sheng, Wei Long. Zirconium-ion implantation of zircaloy-4 investiged by slow positron beam. Acta Physica Sinica, doi: 10.7498/aps.56.6543
[15]	Wang Bo, Zhao You-Wen, Dong Zhi-Yuan, Deng Ai-Hong, Miao Shan-Shan, Yang Jun. Electron irradiation induced defects in high temperature annealed InP single crystal. Acta Physica Sinica, doi: 10.7498/aps.56.1603
[16]	Wu Shi-Gang, Shao Jian-Da, Fan Zheng-Xiu. Negative-ion element impurities breakdown model. Acta Physica Sinica, doi: 10.7498/aps.55.1987
[17]	Zheng Qing, Zhao Xiao-Peng, Li Ming-Ming, Zhao Jing. Regulating ability of defects on the negative refraction of left-handed metamaterials. Acta Physica Sinica, doi: 10.7498/aps.55.6441
[18]	Chen Zhi-Quan, Kawasuso Atsuo. Vacancy-type defects induced by He-implantation in ZnO studied by a slow positron beam. Acta Physica Sinica, doi: 10.7498/aps.55.4353
[19]	Li Peng-Fei, Yan Xiao-Hong, Wang Ru-Zhi. . Acta Physica Sinica, doi: 10.7498/aps.51.2139
[20]	TANG XUE-FENG, GU MU, TONG HONG-YONG, LIANG LING, YAO MING-ZHEN, CHEN LING-YAN, LIAO JING-YING, SHEN BIN-FU, QU XIANG-DONG, YIN ZHI-WEN, XU WEI-XIN, WANG JING-C HENG. A STUDY ON La-DOPED PbWO4 SCINTILLATING CRYSTAL. Acta Physica Sinica, doi: 10.7498/aps.49.2007

Metrics

Abstract views: 340
PDF Downloads: 3
Cited By: 0

姓名
邮箱
手机号码
标题
留言内容
验证码

Search

Article

留言板

Abstract

FullText HTML

Cited By

Metrics

Authors

Referees

About Journal

About

化学键	键能/eV	化学键	键能/eV
C—H	3.2—4.7	C—C	2.6—5.2
N—H	2.1—4.7	C—O	0.95—3.0
C—N	1.2—3.1	C=C	3.3—7.5
C=O	5.5	O—H	3.4—5.2

Search

Article

留言板

Abstract

FullText HTML

Cited By

Metrics

Publishing process

Authors

Referees

About Journal

About