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Wan Fa-Qi, Ma Yan-Ping, Dong Dan-Dan, Ding Wan-Yu, Jiang Hong, Dong Chuang, He Jian-Xiong.Molecule-like structural units in silicate-glass-forming oxides. Acta Physica Sinica, 2020, 69(13): 136101.doi:10.7498/aps.69.20191892 |
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Lü Zi-Feng, Hao Ji-Ming, Li Jun-Hua, Wu Shan.The reconstructing of soot agglomerates in propene ozonolysis and photooxidation systems. Acta Physica Sinica, 2009, 58(1): 662-668.doi:10.7498/aps.58.662 |
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Song Xiao-Shu, Cheng Xin-Lu, Yang Xiang-Dong, Linghu Rong-Feng.Line intensities of 3000—0200 and 1001—0110 transition bands of 14N216O at high temperature. Acta Physica Sinica, 2007, 56(8): 4428-4434.doi:10.7498/aps.56.4428 |
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LIU CUN-YE, LI JIAN, LIANG YI-PING.STRUCTURE EVOLUTION ANALYSIS OF ULTRAFINE PARTICLE OF SILVER OXIDE (Ag2O). Acta Physica Sinica, 1997, 46(2): 306-313.doi:10.7498/aps.46.306 |
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LONG DE-SHUN, WANG YAN-SEN, FANG DU-FEI, TANG JIA-YONG.CALCULATIONS OF THE SURFACE AND DIFFUSION BARRIERS FOR OXYGEN PENETRATION ON METALS AND THEIR OXIDES. Acta Physica Sinica, 1997, 46(10): 1894-1900.doi:10.7498/aps.46.1894 |
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ZENG QING-CHENG.MICROSCOPIC OBSERVATION OF DIFFUSION DISTRIBUTION OF IONIZED IMPURITIES IN SILICON. Acta Physica Sinica, 1981, 30(2): 249-253.doi:10.7498/aps.30.249 |
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XIA RI-YUAN.IMPURITY OUT-DIFFUSION MODEL IN RECRYSTALLIZATION OF AMORPHOUS LAYER DUE TO HIGH DOSE ION IMPLANTATION. Acta Physica Sinica, 1980, 29(5): 566-576.doi:10.7498/aps.29.566 |
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ZHANG YI-XIANG, HUO YU-PING.THE IMPURITY ENERGY LEVELS IN SEMICONDUCTORS. Acta Physica Sinica, 1966, 22(1): 29-46.doi:10.7498/aps.22.29 |
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WANG GOO-WEN, BAO YAN-PENG, CAO JIN-RUI, ZHANG GUANG-YONG.THE EFFECTS OF PLANE STRESS ON FOUR EXCITON LINE SERIES IN CUPROUS OXIDE CRYSTAL. Acta Physica Sinica, 1966, 22(7): 743-748.doi:10.7498/aps.22.743 |
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.ДИФФУЗИЯ ФОСФОРА В ОКИСНОМ СЛОЕ НА ПОВЕРХНОСТИ КРЕМНИЯ. Acta Physica Sinica, 1965, 21(3): 496-502.doi:10.7498/aps.21.496 |
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CHEN CHEN-CHIA, YOUNG CHENG-CHING, HUANG HENG-CHI.DIFFUSION OF PHOSPHORUS INTO SILICON THROUGH SILICON DIOXIDE FILM GROWN BY THERMAL OXIDATION. Acta Physica Sinica, 1964, 20(7): 662-669.doi:10.7498/aps.20.662 |
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LING SHU-LEN, HUANG CHAANG, SHU BIENG-HUA.MEASUREMENT OF THE IMPURITY DISTRIBUTION OF DIFFUSED LAYERS IN SILICON BY THE FOUR-POINT PROBE AND THE ANODIC OXIDATION TECHNIQUE. Acta Physica Sinica, 1964, 20(7): 643-653.doi:10.7498/aps.20.643 |
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HO YU-PING.THE SHALLOW IMPURITY STATES IN SEMICONDUCTORS. Acta Physica Sinica, 1963, 19(5): 273-284.doi:10.7498/aps.19.273 |
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WU TZU-LIANG, WANG CHI-MIN.MECHANISM OF CARBON DIFFUSION PEAK IN F. C. C. IRON-NICKEL ALLOYS. Acta Physica Sinica, 1958, 14(4): 354-368.doi:10.7498/aps.14.354 |
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.ВЛИЯНИЕ СЕРЕБРА НА ЭЛЕКТРИЧЕСКИЕ СВОЙСТВА ЗАКИСИ МЕДИ. Acta Physica Sinica, 1958, 14(5): 423-427.doi:10.7498/aps.14.423 |
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KE TING-SUI, MA YING-LIANG.INTERNAL FRICTION PEAK ASSOCIATED WITH THE STRESSINDUCED DIFFUSION OF CARBON IN LOW-CARBON ALLOY MARTENSITE. Acta Physica Sinica, 1957, 13(1): 69-77.doi:10.7498/aps.13.69 |
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KE TING-SUI, YANG PEN-WEI.A STUDY ON THE DIFFUSION OF CARBON IN γ-IRON BY METHOD OF INTERNAL FRICTION. Acta Physica Sinica, 1957, 13(5): 409-416.doi:10.7498/aps.13.409 |
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