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Zhang Ni1\2, Liu Ding1\2, Feng Xue-Liang.Effects of process parameters on melt-crystal interface in Czochralski silicon crystal growth. Acta Physica Sinica, 2018, 67(21): 218701.doi:10.7498/aps.67.20180305 |
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Wang Yong-Zhi, Xu Jin, Wang Na-Ting, Ji Chuan, Zhang Guang-Chao.Effect of copper precipitation on the formation of denuded zone in Czchralski silicon. Acta Physica Sinica, 2012, 61(1): 016105.doi:10.7498/aps.61.016105 |
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Xu Jin, Li Fu-Long, Yang De-Ren.Grown-in oxygen precipitates in czochralski silicon investigated by transmission electron microscopy. Acta Physica Sinica, 2007, 56(7): 4113-4116.doi:10.7498/aps.56.4113 |
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Hao Qiu-Yan, Liu Cai-Chi, Sun Wei-Zhong, Zhang Jian-Qiang, Sun Shi-Long, Zhao Li-Wei, Zhang Jian-Feng, Zhou Qi-Gang, Wang Jing.Effect of high temperature rapid thermal annealing on flow pattern defects in heavily Sb-doped CZSi. Acta Physica Sinica, 2005, 54(10): 4863-4866.doi:10.7498/aps.54.4863 |
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LI MING, MAI ZHEN-HONG, CUI SHU-PAN.CHARACTERIZATION OF MICRO-DEFECTS IN SILICON SINGLE CRYSTALS BY ANALYZING THE PENDELL?SUNG FRINGES. Acta Physica Sinica, 1994, 43(1): 78-83.doi:10.7498/aps.43.78 |
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YANG PING.BEHAVIOUR OF X-RAY DIFFRACTION FROM UNIFORMLY BENT Si CRYSTAL. Acta Physica Sinica, 1992, 41(2): 267-271.doi:10.7498/aps.41.267 |
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GAO YU-ZUN, S. OHNUKI, H. TAKAHASHI, Y. SATO, T. TAKEYAMA.THE EFFECT OF HYDROGEN IMPLANTATION ON ELECTRON IRRADIATED DEFECTS AND BLISTER FORMATION IN SILICON SINGLE CRYSTAL. Acta Physica Sinica, 1988, 37(1): 152-156.doi:10.7498/aps.37.152 |
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WANG YU-MIN, A. ERNEST.TRANSIENT CURRENT ANALYSIS IN TOWNSEND DISCHARGE WITH VARIOUS KINDS OF METASTABLES. Acta Physica Sinica, 1988, 37(6): 996-1002.doi:10.7498/aps.37.996 |
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CHU XI, MAI ZHEN-HONG, DAI DAO-YANG, CUI SHU-FAN, GE PEI-WEN.STUDY ON A PLANE-LIKE PRECIPITATE IN SILICON SINGLE CRYSTAL BY X-RAY TOPOGRAPHIC METHOD. Acta Physica Sinica, 1987, 36(3): 408-410.doi:10.7498/aps.36.408 |
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Duan Pei Gao Ping Tang Ji-you.A STUDY ON AS-GROWN SWIRL DEFECTS IN CZ SILICON CRYSTAL. Acta Physica Sinica, 1987, 36(8): 986-991.doi:10.7498/aps.36.986 |
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YAO JIE, CHEN BAO-QIONG, WANG HONG-KAI.INVERSION OF p-TYPE SILICON TO n-TYPE BY PULSED LASER IRRADIATION. Acta Physica Sinica, 1985, 34(1): 117-120.doi:10.7498/aps.34.117 |
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HE XIAN-CHANG.EXPERIMENTAL INVESTIGATION OF THE DISTRIBUTION OF DEFECTS CAUSED BY HYDROGEN IN SILICON SINGLE CRYSTALS. Acta Physica Sinica, 1984, 33(5): 694-695.doi:10.7498/aps.33.694 |
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MAI ZHEN-HONG, CUI SHU-FAN, LIN JIAN, Lü YAN.STUDY OF HYDROGEN-INDUCED DEFECTS IN FLOATING ZONE SILICON GROWN IN HYDROGEN ATMOSPHERE. Acta Physica Sinica, 1984, 33(7): 921-926.doi:10.7498/aps.33.921 |
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MAI ZHEN-HONG, CUI SHU-FAN, FU QUAN-GUI, LIN RU-GAN, ZHANG JIN-FU.OBSERVATION ON “AS GROWN” MICRODEFECTS IN CZ SILICON SINGLE CRYSTAL. Acta Physica Sinica, 1983, 32(5): 685-688.doi:10.7498/aps.32.685 |
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YANG CHUAN-ZHENG, ZHU JIAN-SHENG.INVESTIGATION OF THE DEFECTS IN SILICON SINGLE CRYSTALS GROWN BY FLOATING-ZONE METHOD IN THE ATMOSPHERE CONTAINING HYDROGEN. Acta Physica Sinica, 1982, 31(3): 278-284.doi:10.7498/aps.31.278 |
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LIU ZHEN-MAO, WANG GUI-HUA.A DISLOCATION SOURCE IN THE FLOAT-ZONE GROWN SILICON SINGLE CRYSTALS. Acta Physica Sinica, 1980, 29(9): 1164-1179.doi:10.7498/aps.29.1164 |
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JIANG BAI-LIN, SHENG SHI-XIONG, XIAO ZHI-GANG, BAO JIAN-YING.MECHANISM OF THE FORMATION OF THE DEFECTS DURING HEAT TREATMENT IN SINGLE SILICON CRYSTAL GROWN BY FLOATING ZONE METHOD UNDER PURE HYDROGEN. Acta Physica Sinica, 1980, 29(10): 1283-1292.doi:10.7498/aps.29.1283 |
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BA TU, HE YI-ZHEN.MORPHOLOGY OF THE COPPER PRECIPITATES IN SILICON SINGLE CRYSTALS. Acta Physica Sinica, 1980, 29(7): 860-866.doi:10.7498/aps.29.860 |
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CUI SHU-FAN, GE PEI-WEN, ZHAO YA-QIN, WU LAN-SHENG.THE PRESENCE OF Si-H BONDS IN Si SINGLE CRYSTALS AND ITS INFLUENCES. Acta Physica Sinica, 1979, 28(6): 791-795.doi:10.7498/aps.28.791 |
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TANG TING-YUAN.ON THE GROWTH VELOCITY OF CADMIUM SULPHIDE SINGLE CRYSTALS. Acta Physica Sinica, 1962, 18(4): 207-210.doi:10.7498/aps.18.207 |
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