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Liu Fu-Ti, Zhang Shu-Hua, Cheng Yan, Chen Xiang-Rong, Cheng Xiao-Hong.Theoretical calculation of electron transport properties of atomic chains of (GaAs)n (n=1-4). Acta Physica Sinica, 2016, 65(10): 106201.doi:10.7498/aps.65.106201 |
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Lei Xiao-Li, Wang Da-Wei, Liang Shi-Xiong, Wu Zhao-Xin.Wavefunction and Fourier coefficients of excitons in quantum wells: computation and application. Acta Physica Sinica, 2012, 61(5): 057803.doi:10.7498/aps.61.057803 |
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Zhang Hong, Liu Lei, Liu Jian-Jun.Binding energies of excitons in symmetrical GaAs/Al0.3Ga0.7As double quantum wells. Acta Physica Sinica, 2007, 56(1): 487-490.doi:10.7498/aps.56.487 |
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Xiong Wen, Zhao Hua.Calculation of exciton energies and binding energies in ZnO film. Acta Physica Sinica, 2007, 56(2): 1061-1065.doi:10.7498/aps.56.1061 |
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Ge Zi-Ming, Lv Zhi-Wei, Wang Zhi-Wen, Zhou Ya-Jun.Theoretical calculation of the fine-structure and term energy of the excited states 1s~2 nd(n=3,4,5 of lithium-like systems. Acta Physica Sinica, 2002, 51(12): 2733-2739.doi:10.7498/aps.51.2733 |
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Fa Wei, Luo Cheng-lin.. Acta Physica Sinica, 2000, 49(3): 430-434.doi:10.7498/aps.49.430 |
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CHEN KE, ZHAO ER-HAI, SUN XIN, FU ROU-LI.THE POLARIZABILITY OF EXCITON AND BIEXCITON IN POLYMER(ANALYTICAL CALCULATION). Acta Physica Sinica, 2000, 49(9): 1778-1785.doi:10.7498/aps.49.1778 |
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JIANG GUO-JIAN, ZHANG QING-XUE, ZHUANG HAN-RUI, LI WEN-LAN, LI MAO-ZI.STUDIES OF GRAVITY BEHAVIORS IN THE COURSE OF PRODUCING AlN AND TiC MATERIALS(Ⅱ ). Acta Physica Sinica, 2000, 49(12): 2498-2501.doi:10.7498/aps.49.2498 |
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JIANG GUO-JIAN, ZHANG QING-XUE, ZHUANG HAN-RUI, LI WEN-LAN, LI MAO-ZI.STUDIES OF GRAVITY BEHAVIORS IN THE COURSE OF PRODUCING AlN AND TiC MATERIALS(Ⅲ ). Acta Physica Sinica, 2000, 49(12): 2502-2506.doi:10.7498/aps.49.2502 |
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JIANG GUO-JIAN, ZHANG QING-XUE, ZHUANG HAN-RUI, LI WEN-LAN, LI MAO-ZI.STUDIES OF GRAVITY BEHAVIORS IN THE COURSE OF PRODUCING AlN AND TiC MATERIALS(Ⅰ ). Acta Physica Sinica, 2000, 49(12): 2494-2497.doi:10.7498/aps.49.2494 |
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ZHENG YONG-MEI, WANG REN-ZHI, HE GUO-MIN.THE APPLICATION OF EMPIRICAL PSEUDOPOTENTIAL SCHEME ON THE THEORETICAL CALCULATION OF HETEROJUNCTION BAND ALIGNMENT. Acta Physica Sinica, 1996, 45(9): 1536-1542.doi:10.7498/aps.45.1536 |
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ZHU JIA-LIN, TANG DAO-HUA, XIONG JIA-JIONG, GU BING-LIN.SUBBANDS AND EXCITONS IN A GaAs/Ga1-xAlxAs QUANTUM WELL IN AN ELECTRIC FIELD. Acta Physica Sinica, 1989, 38(3): 385-393.doi:10.7498/aps.38.385 |
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GU YI-MING, HUANG MING-ZHU, WANG KE LING.ELECTRONIC STRUCTURES OF 3d-TRANSITION METAL IN GaAs1-xPx ALLOY SYSTEM. Acta Physica Sinica, 1988, 37(1): 11-19.doi:10.7498/aps.37.11 |
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ZHANG YONG, YU QI, ZHENG JIAN-SHENG, YAN BING-ZHANG, WU BO-XI, LI GUO-HUA, WANG ZHAO-PING, HAN HE-XIANG.PRESSURE BEHAVIOR OF BOUND EXCITONS IN GaAs1-xPx :N. Acta Physica Sinica, 1988, 37(12): 1925-1931.doi:10.7498/aps.37.1925 |
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HUANG QI-SHENG.ANTIBONDING STATE AND RELATED PROPERTIES OF Fe-ACCEPT OR IN GaP AND GaAs. Acta Physica Sinica, 1987, 36(11): 1481-1484.doi:10.7498/aps.36.1481 |
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Xue Fang-shi.ENERGY BAND CALCULATION FOR GaAs, GaP AND GaAsxP1-x. Acta Physica Sinica, 1986, 35(10): 1315-1321.doi:10.7498/aps.35.1315 |
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XU JUN-YING, CHEN LIANG-HUI, GONG JI-SHU, XU ZHONG-YING, ZHUANG WEI-HUA, LI YU-ZHANG, XU JI-ZONG, WU LING-XI.THE PHOTOLUMINESCENCE SPECTRA OF N+, Zn+ IMPLANTED GaAs1-xPx AT 1.8-4.2 K. Acta Physica Sinica, 1984, 33(6): 833-839.doi:10.7498/aps.33.833 |
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XU YONG-NIAN, ZHANG KAI-MING.THE ATOMIC STRUCTURE AND ELECTRONIC STATES OF GaAs1-xPx (110). Acta Physica Sinica, 1983, 32(2): 247-250.doi:10.7498/aps.32.247 |
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XU YONG-NIAN.TIGHT-BINDING CALCULATION FOR GaAs (110) SURFACE. Acta Physica Sinica, 1981, 30(10): 1400-1405.doi:10.7498/aps.30.1400 |
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CHANG YU-WON, YU QI-HUA.THE CALCULATION OF THE ENERGY-BAND STRUCTURE OF SOME SEMICONDUCTORS WITH THE PSEUDOPOTENTIAL PERTURBATION METHOD (APPLICATION TO GaAs, GaP AND Ga[As1-xPx]ALLOY). Acta Physica Sinica, 1965, 21(6): 1162-1169.doi:10.7498/aps.21.1162 |