[1] |
Qiao Xiao-Fen, Li Xiao-Li, Liu He-Nan, Shi Wei, Liu Xue-Lu, Wu Jiang-Bin, Tan Ping-Heng.Periodic oscillation in the reflection and photoluminescence spectra of suspended two-dimensional crystal flakes. Acta Physica Sinica, 2016, 65(13): 136801.doi:10.7498/aps.65.136801 |
[2] |
Li Guo-Dong, Wang Qian, Deng Bao-Xia, Zhang Ya-Jing.Origin of nanopore alumina film photoluminescence: three kinds of defect centers. Acta Physica Sinica, 2014, 63(24): 247802.doi:10.7498/aps.63.247802 |
[3] |
Wang Kai-Yue, Li Zhi-Hong, Zhang Bo, Zhu Yu-Mei.Investigation of vibronic structures of optical centres in diamond by photoluminescence spectra. Acta Physica Sinica, 2012, 61(12): 127804.doi:10.7498/aps.61.127804 |
[4] |
Gao Li, Zhang Jian-Min.Photoluminescence of diluted Mg doped ZnO thin films and band-gap change mechanisms. Acta Physica Sinica, 2010, 59(2): 1263-1267.doi:10.7498/aps.59.1263 |
[5] |
Yao Zhi-Tao, Sun Xin-Rui, Xu Hai-Jun, Jiang Wei-Fen, Xiao Shun-Hua, Li Xin-Jian.The structure and photoluminescence properties of ZnO/silicon nanoporous pillar array. Acta Physica Sinica, 2007, 56(10): 6098-6103.doi:10.7498/aps.56.6098 |
[6] |
Wu Wen-Zhi, Yan Yu-Xi, Zheng Zhi-Ren, Jin Qin-Han, Liu Wei-Long, Zhang Jian-Ping, Yang Yan-Qiang, Su Wen-Hui.Steady-state and nanosecond time-resolved photoluminescence spectroscopies of aqueous CdTe quantum dots. Acta Physica Sinica, 2007, 56(5): 2926-2930.doi:10.7498/aps.56.2926 |
[7] |
Xu Da-Yin, Liu Yan-Ping, He Zhi-Wei, Fang Ze-Bo, Liu Xue-Qin, Wang Yin-Yue.The behavior of photoluminescence from SiC:Tb films deposited on porous silicon substrate. Acta Physica Sinica, 2004, 53(8): 2694-2698.doi:10.7498/aps.53.2694 |
[8] |
Xu Bo, Yu Qing-Xuan, Wu Qi-Hong, Liao Yuan, Wang Guan-Zhong, Fang Rong-Chuan.Effects of strain and Mg-dopant on the photoluminescencespectra in p-type GaN. Acta Physica Sinica, 2004, 53(1): 204-209.doi:10.7498/aps.53.204 |
[9] |
Huang Kai, Wang Si-Hui, Shi Yi, Qin Guo-Yi, Zhang Rong, Zheng You-Dou.Effect of inner electric field on the photoluminescence spectrum of nanosilicon. Acta Physica Sinica, 2004, 53(4): 1236-1242.doi:10.7498/aps.53.1236 |
[10] |
Peng Ai-Hua, Xie Er-Qing, Jiang Ning, Zhang Zhi-Min, Li Peng, He De-Yan.The photoluminescence characterization of rare earths (Tb, Gd) embedded into por ous silicon. Acta Physica Sinica, 2003, 52(7): 1792-1796.doi:10.7498/aps.52.1792 |
[11] |
Shao Jun.Optimal photoluminescence spectrum from Ti-doped ZnTe. Acta Physica Sinica, 2003, 52(7): 1743-1747.doi:10.7498/aps.52.1743 |
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MA SHU-YI, QIN GUO-GANG, YOU LI-PING, WANG YIN-YUE.COMPARATIVE STUDY ON PHOTOLUMINESCENCE FROM Si-CONTAINING SILICON OXIDE FILMS AND Ge-CONTAINING SILICON OXIDE FILMS. Acta Physica Sinica, 2001, 50(8): 1580-1584.doi:10.7498/aps.50.1580 |
[13] |
LIANG ER-JUN, CHAO MING-JU.LASER-INDUCED LATTICE DEFORMATION OF POROUS SILICON REVEALED BY RAMAN AND PHOTOLUMINESCENCE SPECTROSCOPIES. Acta Physica Sinica, 2001, 50(11): 2241-2246.doi:10.7498/aps.50.2241 |
[14] |
.. Acta Physica Sinica, 2000, 49(2): 383-388.doi:10.7498/aps.49.383 |
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ZHANG HAO-XIANG, LU HUAN-MING, YE ZHI-ZHEN, ZHAO BING-HUI, WANG LEI, QUE DUAN-LIN.SECONDARY ION MASS SPECTROSCOPY AND PHOTOLUMINESCENCE INVESTIGATIONS ON THE GaN EPILAYER GROWN ON Si SUBSTRATE. Acta Physica Sinica, 1999, 48(7): 1315-1319.doi:10.7498/aps.48.1315 |
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LIU XIAO-BING, XIONG ZU-HONG, YUAN SHUAI, CHEN YAN-DONG, HE JUN, LIAO LIANG-SHENG, DING XUN-MIN, HOU XIAO-YUAN.STUDIES ON TEMPERATURE DEPENDENCE OF PHOTOLUMINESCENCE IN POROUS SILICON. Acta Physica Sinica, 1998, 47(8): 1391-1396.doi:10.7498/aps.47.1391 |
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DU YING-LEI, LEE KI-HWAN, WU BAI-MEI, JIN YONG-YOU.STUDY OF PHOTOLUMINESCENCE SPECTRUM IN p-TYPE α-POROUS SILICON CARBIDE. Acta Physica Sinica, 1998, 47(10): 1747-1753.doi:10.7498/aps.47.1747 |
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LIAO LIANG-SHENG, YUAN ZE-LIANG, LIU XIAO-BING, HOU XIAO-YUAN.TWO KINDS OF ELECTROLUMINESCENCE FROM POROUSSILICON IN ELECTROLYTE SOLUTIONS. Acta Physica Sinica, 1997, 46(6): 1223-1229.doi:10.7498/aps.46.1223 |
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ZHANG BAI-XIN, ZHANG LI-ZHU, SONG HAI-ZHI, YAO GUANG-QING, DUAN JIA-DI, TAO GUO-QIANG.PEAK ENERGY FOCUSING OF PHOTOLUMINESCENCE FROM POROUS SILICON DURING STORING IN AIR OR 200℃ THERMAL OXIDATION. Acta Physica Sinica, 1995, 44(11): 1825-1830.doi:10.7498/aps.44.1825 |
[20] |
LIN JUN, ZHANG LI-ZHU, ZHANG BO-RUI, ZONG BO-QING, QIN GUO-GANG, XU ZHEN-HUA.PHOTOLUMINESCENCE OF POROUS SILICON PROCESSED IN H2O2 UNDER ILLUMINATION. Acta Physica Sinica, 1994, 43(4): 646-650.doi:10.7498/aps.43.646 |