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Ma Li-Ya, Li Yu-Dong, Guo Qi, Ai Er-Ken, Wang Hai-Jiao, Zeng Jun-Zhe.Photoluminescence spectra of 1 MeV electron beam irradiated In0.53Ga0.47As/InP quantum well and bulk materials. Acta Physica Sinica, 2015, 64(15): 154217.doi:10.7498/aps.64.154217 |
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Yang Shuang-Bo.Effect of doping concentration and doping thickness on the structure of electronic state of the Si uniformly doped GaAs quantum well. Acta Physica Sinica, 2013, 62(15): 157301.doi:10.7498/aps.62.157301 |
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Liu Li-Xiang, Dong Li-Juan, Liu Yan-Hong, Yang Cheng-Quan, Shi Yun-Long.Properties of photonic quantum well structures containing left-handed materials. Acta Physica Sinica, 2012, 61(13): 134210.doi:10.7498/aps.61.134210 |
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Lü You-Ming, Mei Ting, Su Shi-Chen.Fabrication and optical properties of ZnO/ZnMgO multiple quantum wells on m-sapphire substrates. Acta Physica Sinica, 2011, 60(9): 096801.doi:10.7498/aps.60.096801 |
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Ma Xiao-Feng, Wang Yi-Zhe, Zhou Cheng-Yue.Structural and optical properties of a-Si ∶H/SiO2 multiple quantum wells. Acta Physica Sinica, 2011, 60(6): 068102.doi:10.7498/aps.60.068102 |
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Huang Rui, Wang Dan-Qing, Song Jie, Ding Hong-Lin, Wang Xiang, Guo Yan-Qing, Chen Kun-Ji, Xu Jun, Li Wei, Ma Zhong-Yuan.Fabrication and luminescence properties of Si quantum dots based on Si-rich SiNx/N-rich SiNy multilayer. Acta Physica Sinica, 2010, 59(8): 5823-5827.doi:10.7498/aps.59.5823 |
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Huang Rui, Dong Heng-Ping, Wang Dan-Qing, Chen Kun-Ji, Ding Hong-Lin, Xu Jun, Li Wei, Ma Zhong-Yuan.Electroluminescence from Si-rich SiNx/N-rich SiNy multilayer light-emitting devices. Acta Physica Sinica, 2009, 58(3): 2072-2076.doi:10.7498/aps.58.2072 |
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Zheng Li-Ren, Huang Bai-Biao, Wei Ji-Yong.Synthesis of silicon oxide nanocluster and C-Si-O nanospheres morphology and photoluminscence Fourier transform infrared spectroscopy study. Acta Physica Sinica, 2009, 58(12): 8612-8616.doi:10.7498/aps.58.8612 |
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Xu Geng-Zhao, Liang Hu, Bai Yong-Qiang, Lau Kei-May, Zhu Xing.Study of temperature dependent electroluminescence of InGaN/GaN multiple quantum wells using low temperature scanning near-field optical microscopy. Acta Physica Sinica, 2005, 54(11): 5344-5349.doi:10.7498/aps.54.5344 |
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Xu Xiao-Hua, Niu Zhi-Chuan, Ni Hai-Qiao, Xu Ying-Qiang, Zhang Wei, He Zheng-Hong, Han Qin, Wu Rong-Han, Jiang De-Sheng.Photoluminescence study of (GaAs1－xSbx/InyGa1－yAs)/GaAs bilayer quantum well grown by molecular beam epitaxy. Acta Physica Sinica, 2005, 54(6): 2950-2954.doi:10.7498/aps.54.2950 |
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Shao Jia-Ping, Hu Hui, Guo Wen-Ping, Wang Lai, Luo Yi, Sun Chang-Zheng, Hao Zhi-Biao.Study on electroluminescence spectra of InxGa1－xN/GaN-MQWs materials with high indium contents. Acta Physica Sinica, 2005, 54(8): 3905-3909.doi:10.7498/aps.54.3905 |
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Wang Hua.Studies on the preparation and characterization of Bi4Ti3O12 thin films on p-Si substrates. Acta Physica Sinica, 2004, 53(4): 1265-1270.doi:10.7498/aps.53.1265 |
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Ji Ai-Ling, Ma Li-Bo, Liu Cheng, Wang Yong-Qian.Low temperature fabrication of nanostructured Si-SiOx and Si-SiNx composite films and their photoluminescence features. Acta Physica Sinica, 2004, 53(11): 3818-3822.doi:10.7498/aps.53.3818 |
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WANG SHAO-WEI, LU WEI, WANG HONG, WANG DONG, WANG MIN, SHEN XUE-CHU.C-V CHARACTERISTICS OF Bi2Ti2O7 THIN FILMS ON n-Si(100). Acta Physica Sinica, 2001, 50(12): 2461-2465.doi:10.7498/aps.50.2461 |
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LIN FENG, SHENG CHI, KE LIAN, ZHU JIAN-HONG, GONG DA-WEI, ZHANG SHENG-KUN, YU MIN-FENG, FAN YONG-LIANG, WANG XUN.GROUND STATE ENERGY LEVEL OF Si-BASE QUANTUM WELLS DETECTED BY ADMITTANCE SPECTROSCOPY. Acta Physica Sinica, 1998, 47(7): 1171-1179.doi:10.7498/aps.47.1171 |
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YANG YU, XIA GUAN-QUN, ZHAO GUO-QING, WANG XUN.Si+ ION IMPLANTATION INFLUENCE ON PHOTOLUMINESCENCE IN Si1-xGex/Si QUANTUM WELLS GROWN BY MOLECULAR BEAM EPITAXY. Acta Physica Sinica, 1998, 47(6): 978-984.doi:10.7498/aps.47.978 |
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YU MIN-FENG, YANG YU, SHEN WEN-ZHONG, ZHU HAI-JUN, GONG DA-WEI, SHENG CHI, WANG XUN.INTERSUBBAND ABSORPTION IN p-TYPE GexSi1-x/Si MULTIPLE QUANTUM WELLS AND ITS ANALYSIS. Acta Physica Sinica, 1997, 46(4): 740-746.doi:10.7498/aps.46.740 |
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WANG XIAO-PING, ZHAO TE-XIU, LIU HONG-TU, SHI YI-SHENG, WENG HUI-MIN, GUO XUE-ZHE.ELECTRICAL PROPERTIES OF WSix/Si(111)FILMS BY MULTILAYER SPUTTERING. Acta Physica Sinica, 1994, 43(5): 823-828.doi:10.7498/aps.43.823 |
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WANG SHAN-ZHONG, LI DAO-HUO.A STUDY ON LASER-PREPARATION AND ENERGY- LEVEL STRUCTURE OF NANOMETER SIZED a-Si3N4 PARTICLES. Acta Physica Sinica, 1994, 43(4): 627-631.doi:10.7498/aps.43.627 |
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LI XIAN-HUANG, LU FANG, SUN HENG-HUI.VALENCE BAND OFFSET IN PSEUDOMORPHIC Si/Ge0.25Si0.75/Si SINGLE QUANTUM WELL MEASURED BY DEEP LEVEL TRANSIENT SPECTROSCOPY. Acta Physica Sinica, 1993, 42(7): 1153-1159.doi:10.7498/aps.42.1153 |
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