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Cao Yu, Zhang Jian-Jun, Yan Gan-Gui, Ni Jian, Li Tian-Wei, Huang Zhen-Hua, Zhao Ying.Influences of electrode separation on structural properties of μc-Si1-xGex：H thin films. Acta Physica Sinica, 2014, 63(7): 076801.doi:10.7498/aps.63.076801 |
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Dai Xian-Ying, Yang Cheng, Song Jian-Jun, Zhang He-Ming, Hao Yue, Zheng Ruo-Chuan.The model of valence-band dispersion for strained Ge/Si1-xGex. Acta Physica Sinica, 2012, 61(13): 137104.doi:10.7498/aps.61.137104 |
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Li Bin, Liu Hong-Xia, Yuan Bo, Li Jin, Lu Feng-Ming.Model of electron mobility in inversion layer of strained Si/Si1-xGex n type metal-oxide-semiconductor field-effect transistors. Acta Physica Sinica, 2011, 60(1): 017202.doi:10.7498/aps.60.017202 |
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