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Peng Lan-Qin, Li Xiao-Yu, Xing Yun, Zhao Han, Deng Yan-Tao, Yu Ying-Hui.Adsorption configuration and assembly structure of vanadyl phthalocyanine molecule on copper oxide layer. Acta Physica Sinica, 2024, 73(12): 120704.doi:10.7498/aps.73.20240043 |
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Ma Chao, Min Dao-Min, Li Sheng-Tao, Zheng Xu, Li Xi-Yu, Min Chao, Zhan Hai-Xia.Trap distribution and direct current breakdown characteristics in polypropylene/Al2O3 nanodielectrics. Acta Physica Sinica, 2017, 66(6): 067701.doi:10.7498/aps.66.067701 |
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Zhu Jian-Yun, Liu Lu, Li Yu-Qiang, Xu Jing-Ping.Effect of annealing atmosphere on characteristics of MONOS with LaTiON or HfLaON as charge storage layer. Acta Physica Sinica, 2013, 62(3): 038501.doi:10.7498/aps.62.038501 |
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Yan Da-Wei, Li Li-Sha, Jiao Jin-Ping, Huang Hong-Juan, Ren Jian, Gu Xiao-Feng.Capacitance characteristics of atomic layer deposited Al2O3/n-GaN MOS structure. Acta Physica Sinica, 2013, 62(19): 197203.doi:10.7498/aps.62.197203 |
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Zhang Lei, Ye Hui, Huangfu You-Rui, Liu Xu.Investigation of Ge quantum dots formation on SiO2 substratethrough annealing process. Acta Physica Sinica, 2011, 60(7): 076103.doi:10.7498/aps.60.076103 |
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Sang Cui-Cui, Wang Yong-Jun, Wan Jian-Jie, Ding Xiao-Bin, Dong Chen-Zhong.Theoretical study of radiative recombination and the sub-sequent radiative decay processes in highly charged Au ions. Acta Physica Sinica, 2010, 59(6): 3871-3877.doi:10.7498/aps.59.3871 |
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Chen Wei-Hua, Du Lei, Zhuang Yi-Qi, Bao Jun-Lin, He Liang, Zhang Tian-Fu, Zhang Xue.A model considering the ionizing radiation effects in MOS structure. Acta Physica Sinica, 2009, 58(6): 4090-4095.doi:10.7498/aps.58.4090 |
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Ding Hong-Lin, Liu Kui, Wang Xiang, Fang Zhong-Hui, Huang Jian, Yu Lin-Wei, Li Wei, Huang Xin-Fan, Chen Kun-Ji.Effect of control oxide on the performance of nanocrystalline silicon based double-barrier floating gate memory structure. Acta Physica Sinica, 2008, 57(7): 4482-4486.doi:10.7498/aps.57.4482 |
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Luan Su-Zhen, Liu Hong-Xia, Jia Ren-Xu.The dynamic reliability of ultra-thin gate oxide and its breakdown characteristics. Acta Physica Sinica, 2008, 57(4): 2524-2528.doi:10.7498/aps.57.2524 |
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Ma Xiao-Hua, Hao Yue, Chen Hai-Feng, Cao Yan-Rong, Zhou Peng-Ju.The breakdown characteristics of ultra-thin gate oxide n-MOSFET under voltage stress. Acta Physica Sinica, 2006, 55(11): 6118-6122.doi:10.7498/aps.55.6118 |
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Zhu Jun, Zhang Xing-Yuan, Lu Hong-Bo.Effect of annealing and polarizing temperature on the trap level distribution in nylon 11 film electrets. Acta Physica Sinica, 2005, 54(7): 3414-3417.doi:10.7498/aps.54.3414 |
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Wang Yan-Gang, Xu Ming-Zhen, Tan Chang-Hua, Duan Xiao-Rong.Conduction mechanism of ultra-thin gate oxide n-MOSFET after soft breakdown. Acta Physica Sinica, 2005, 54(8): 3884-3888.doi:10.7498/aps.54.3884 |
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Zhou Chun-Hong, Zheng You-Dou, Deng Yong-Zhen, Kong Yue-Chan, Chen Peng, Xi Dong-Juan, Gu Shu-Lin, Shen Bo, Zhang Rong, Jiang Ruo-Lian, Han Ping, Shi Yi.Study of interface trap states of AlN-Si(111) heterostructure*. Acta Physica Sinica, 2004, 53(11): 3888-3894.doi:10.7498/aps.53.3888 |
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Shen Feng, Xu Qing-Yu, Lu Zheng-Qi, Cai Jian-Wang, Lai Wu-Yan, Zhang Ze.. Acta Physica Sinica, 2002, 51(8): 1851-1855.doi:10.7498/aps.51.1851 |
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Liu Hong-Xia, Zheng Xue-Feng, Hao Yao.. Acta Physica Sinica, 2002, 51(1): 163-166.doi:10.7498/aps.51.163 |
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LIU HONG-XIA, FANG JIAN-PING, HAO YUE.EXPERIMENTAL ANALYSIS AND PHYSICAL MODEL INVESTIGATION OF TDDB OF THIN GATE OXIDE. Acta Physica Sinica, 2001, 50(6): 1172-1177.doi:10.7498/aps.50.1172 |
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LIU HONG-XIA, HAO YUE.STUDY ON STRESS INDEUCED LEAKAGE CURRENT TRANSIENT CHARACTERISTICS IN THIN GATE OXIDE. Acta Physica Sinica, 2001, 50(9): 1769-1773.doi:10.7498/aps.50.1769 |
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LIU HONG-XIA, HAO YUE.STUDY ON PARAMETER CHARACTERIZATION OF THIN GATE OXIDE TDDB BREAKDOWN. Acta Physica Sinica, 2000, 49(6): 1163-1167.doi:10.7498/aps.49.1163 |
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LOU ZHI-DONG, XU ZHENG, XU CHUN-XIANG, YU LEI, TENG FENG, XU XU-RONG.HIGH-FIELD ELECTRON TRANSPORT OF AMORPHOUS SiO2 AS ACCELERATING LAYER IN THE LAYERED OPTIMIZATION TFEL. Acta Physica Sinica, 1998, 47(1): 139-145.doi:10.7498/aps.47.139 |
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YANG BING-LIANG, LIU BAI-YONG, Y. C. CHENG, H. WONG.STUDY ON HIGH-FIELD ELECTRON TRAPPING AND DETRAPPING PROPERTY IN THIN SiOx Ny FILMS. Acta Physica Sinica, 1991, 40(11): 1855-1861.doi:10.7498/aps.40.1855 |
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