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Zhen Kang, Gu Ran, Ye Jian-Dong, Gu Shu-Lin, Ren Fang-Fang, Zhu Shun-Ming, Huang Shi-Min, Tang Kun, Tang Dong-Ming, Yang Yi, Zhang Rong, Zheng You-Dou.Effect of oxygen implantation on microstructural and optical properties of ZnTe:O intermediate-band photovoltaic materials. Acta Physica Sinica, 2014, 63(23): 237103.doi:10.7498/aps.63.237103 |
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Huang Yong-Xian, Lü Shi-Xiong, Tian Xiu-Bo, Yang Shi-Qin, Fu Ricky, Chu K Paul, Leng Jin-Song, Li Yao.Effect of physical properties of polymer on ion implantation. Acta Physica Sinica, 2012, 61(10): 105203.doi:10.7498/aps.61.105203 |
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Zang Hang, Wang Zhi-Guang, Pang Li-Long, Wei Kong-Fang, Yao Cun-Feng, Shen Tie-Long, Sun Jian-Rong, Ma Yi-Zhun, Gou Jie, Sheng Yan-Bin, Zhu Ya-Bin.Raman investigation of ion-implanted ZnO films. Acta Physica Sinica, 2010, 59(7): 4831-4836.doi:10.7498/aps.59.4831 |
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Hu Liang-Jun, Chen Yong-Hai, Ye Xiao-Ling, Wang Zhan-Guo.Electrical and optical properties of InAs/GaAs quantum dots doped by high energy Mn implantation. Acta Physica Sinica, 2007, 56(8): 4930-4935.doi:10.7498/aps.56.4930 |
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Zhong Hong-Mei, Chen Xiao-Shuang, Wang Jin-Bin, Xia Chang-Sheng, Wang Shao-Wei, Li Zhi-Feng, Xu Wen-Lan, Lu Wei.Preparation of ZnMnO by ion implantation and its spectral characterization. Acta Physica Sinica, 2006, 55(4): 2073-2077.doi:10.7498/aps.55.2073 |
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Lu Ting, Zhou Hong-Yu, Ding Xiao-Ji, Wang Xin-Fu, Zhu Guang-Hua.The study of depth distribution for ion with low energy implanted into plant seeds and mechanism of biological effect. Acta Physica Sinica, 2005, 54(10): 4822-4826.doi:10.7498/aps.54.4822 |
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Xie Jing-Yi, Zhou Hong-Yu, Wang Ping, Ding Xiao-Ji, Liu Zhi-Guo, Song Hai, Lu Ting, Zhu Guang-Hua.A study of directional effect of depth-concentration distribution for implanted heavy ions with low energies in dry peanut seeds. Acta Physica Sinica, 2003, 52(10): 2530-2533.doi:10.7498/aps.52.2530 |
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Chen Gui-Bin, Lu Wei, Liao Zhong-Lin, Li Zhi-Feng, Chai Wei-Ying, Shen Xue-Chu, Chen Chang-Ming, Zhu De-Zhang, Hu Jun, Li Ming-Qian.. Acta Physica Sinica, 2002, 51(3): 659-662.doi:10.7498/aps.51.659 |
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TU XIAN-HUA, LI DAO-HUO.BLUE-LIGHT ENHANCEMENT EFFECT IN ION IMPLANTED NANO-Si3N4 QUANTUM DOTS. Acta Physica Sinica, 2000, 49(7): 1383-1385.doi:10.7498/aps.49.1383 |
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ZHANG LIAN-MENG, SHEN QIANG, LI JUN-GUO, WANG GUO-MEI, TU RONG, CHEN LI-DONG, TOSHIO HIRAI.THERMOELECTRIC PROPERTIES AND STRUCTURE OF Sn-IMPLANTED LEAD TELLURIDE. Acta Physica Sinica, 1999, 48(12): 2334-2342.doi:10.7498/aps.48.2334 |
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ZOU YUN-JUAN, YAN HUI, CHEN GUANG-HUA, JIN YUN-FAN, YANG RU.ION RADIATION DAMAGE OF C60 FILMS. Acta Physica Sinica, 1998, 47(11): 1923-1927.doi:10.7498/aps.47.1923 |
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Lu Wu-Xing, R.J.Schreatelkamp, J.R.Liefting, F.W.Saris.. Acta Physica Sinica, 1995, 44(7): 1101-1107.doi:10.7498/aps.44.1101 |
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ZHANG JIAN-HUA, LIU ZENG-SHAN, QIN YONG-ZHI.A STUDY OF ZINC DIFFUSION IN ION-IMPLANTED POLYCRY-STALLINE ALUMINIUM. Acta Physica Sinica, 1992, 41(9): 1474-1481.doi:10.7498/aps.41.1474 |
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TIAN REN-HE, LU WU-XING, LI ZHU-HUAI, GAO YU-ZUN.A STUDY OF SECONDARY DEFECTS IN ION- IMPLANTED InSb. Acta Physica Sinica, 1992, 41(5): 809-813.doi:10.7498/aps.41.809 |
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YU YUE-HUI, LIN CHENG-LU, ZHANG SHUN-KAI, FANG ZI-ZEI, ZOU SHI-CHANG.AUGER ELECTRON SPECTROSCOPIC STUDIES OF INTERFA CE AND BURIED LAYER OF SOI STRUCTURE FORMED BY ION IMPLANTATION. Acta Physica Sinica, 1989, 38(12): 1996-2002.doi:10.7498/aps.38.1996 |
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LIU SHI-JIE, S. U. CAMPISANO.LASER PULSE ANNEALING ION-IMPLANTED GaAs. Acta Physica Sinica, 1988, 37(5): 842-846.doi:10.7498/aps.37.842 |
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ZHAO GUANG-LIN.THE INFLUENCE OF IMPLANTED IONS ON THE SUPERCONDUCTING TRANSITION TEMPERATURE. Acta Physica Sinica, 1984, 33(4): 571-574.doi:10.7498/aps.33.571 |
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QIAN YOU-HUA, CHEN LIANG-YAO.ELECTROLYTE ELECTROREFLECTANCE (EER) SPECTROSCOPY OF ION IMPLANTED SILICON LAYER. Acta Physica Sinica, 1982, 31(5): 646-653.doi:10.7498/aps.31.646 |
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WANG WEI-YUAN, QIAO YONG, LIN CHENG-LU, LUO CHAO-WEI, ZHOU YONG-QUAN.SILICON IMPLANTATION IN SEMI-INSULATING GaAs SUBSTRATE. Acta Physica Sinica, 1982, 31(1): 71-77.doi:10.7498/aps.31.71 |
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MO DANG, LU YIN-CHENG, LI DAN-HUI, LIU SHANG-HE, LU WU-XING.ELLIPSOMETRIC STUDY OF DAMAGE AND ANNEALING IN ARSENIC ION IMPLANTED SILICON. Acta Physica Sinica, 1980, 29(9): 1214-1216.doi:10.7498/aps.29.1214 |
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