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.3D Simulation Study on the Mechanism of Influence Factor of Total Dose Ionizing Effect on SiGe HBT. Acta Physica Sinica, 2021, (): .doi:10.7498/aps.70.20211795 |
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Lü Yi, Zhang He-Ming, Hu Hui-Yong, Yang Jin-Yong, Yin Shu-Juan, Zhou Chun-Yu.A model of capacitance characteristic for uniaxially strained Si N-metal-oxide-semiconductor field-effect transistor. Acta Physica Sinica, 2015, 64(6): 067305.doi:10.7498/aps.64.067305 |
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Song Jian-Jun, Yang Chao, Zhu He, Zhang He-Ming, Xuan Rong-Xi, Hu Hui-Yong, Shu Bin.Structure design and frequency characteristics of SOI SiGe HBT. Acta Physica Sinica, 2014, 63(11): 118501.doi:10.7498/aps.63.118501 |
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Liu Jing, Wu Yu, Gao Yong.Research on SiGe heterojunction bipolar transistor with a trench-type emitter. Acta Physica Sinica, 2014, 63(14): 148503.doi:10.7498/aps.63.148503 |
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Zhang Yu-Jie, Zhang Wan-Rong, Jin Dong-Yue, Chen Liang, Fu Qiang, Guo Zhen-Jie, Xing Guang-Hui, Lu Zhi-Yi.Effects of Ge profile on thermal characteristics of SiGe heterojunction bipolar transistor with non-uniform doping profile in base region. Acta Physica Sinica, 2013, 62(3): 034401.doi:10.7498/aps.62.034401 |
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Wang Bin, Zhang He-Ming, Hu Hui-Yong, Zhang Yu-Ming, Song Jian-Jun, Zhou Chun-Yu, Li Yu-Chen.Study on gate capacitance-voltage characteristics of strained-SiGe pMOSFET. Acta Physica Sinica, 2013, 62(12): 127102.doi:10.7498/aps.62.127102 |
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Zhang Bin, Yang Yin-Tang, Li Yue-Jin, Xu Xiao-Bo.Electrical behavior research of silicon-on-insulator SiGe heterojunction bipolar transistor. Acta Physica Sinica, 2012, 61(23): 238502.doi:10.7498/aps.61.238502 |
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Wang Xin-Hua, Pang Lei, Chen Xiao-Juan, Yuan Ting-Ting, Luo Wei-Jun, Zheng Ying-Kui, Wei Ke, Liu Xin-Yu.Investigation on trap by the gate fringecapacitance in GaN HEMT. Acta Physica Sinica, 2011, 60(9): 097101.doi:10.7498/aps.60.097101 |
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Hu Hui-Yong, Shu Yu, Zhang He-Ming, Song Jian-Jun, Xuan Rong-Xi, Qing Shan-Shan, Qu Jiang-Tao.Collector junction depletion-layer width model of SiGeheterojunction bipolar transistor with intrinsic SiGe layer. Acta Physica Sinica, 2011, 60(1): 017303.doi:10.7498/aps.60.017303 |
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Xiao Ying, Zhang Wan-Rong, Jin Dong-Yue, Chen Liang, Wang Ren-Qing, Xie Hong-Yun.Effect of bandgap engineering on thermal characteristic of radiofrequency power SiGe heterojunction bipolar transistor. Acta Physica Sinica, 2011, 60(4): 044402.doi:10.7498/aps.60.044402 |
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Xu Xiao-Bo, Zhang He-Ming, Hu Hui-Yong, Xu Li-Jun, Ma Jian-Li.A collector space charge region model for SiGe HBT on thin-film SOI. Acta Physica Sinica, 2011, 60(7): 078502.doi:10.7498/aps.60.078502 |
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Xu Xiao-Bo, Zhang He-Ming, Hu Hui-Yong.Improved base-collector depletion charge and capacitance model for SiGe HBT on thin-film SOI. Acta Physica Sinica, 2011, 60(11): 118501.doi:10.7498/aps.60.118501 |
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Quan Jun, Liu Yi-Xing, Yu Ya-Bin.Dynamic response of the coherent parallel-plate capacitor to the external field. Acta Physica Sinica, 2010, 59(2): 1237-1242.doi:10.7498/aps.59.1237 |
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Qiu Shen-Yu, Cai Shao-Hong.Quantum effect of dissipative mesoscopic capacitance coupled circuit. Acta Physica Sinica, 2006, 55(2): 816-819.doi:10.7498/aps.55.816 |
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Hu Hui-Yong, Zhang He-Ming, Lü Yi, Dai Xian-Ying, Hou Hui, Ou Jian-Feng, Wang Wei, Wang Xi-Yuan.SiGe HBT large signal equivalent circuit model. Acta Physica Sinica, 2006, 55(1): 403-408.doi:10.7498/aps.55.403 |
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Wang Long-Hai, Yu Jun, Wang Yun-Bo, Peng Gang, Liu Feng, Gao Jun-Xiong.A model of ferroelectric capacitors based on hysteresis loop. Acta Physica Sinica, 2005, 54(2): 949-954.doi:10.7498/aps.54.949 |
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Shu Bin, Dai Xian-Ying, Zhang He-Ming.Determination of bandgap in SiGe strained layers using a pn heterojunction C-V. Acta Physica Sinica, 2004, 53(1): 235-238.doi:10.7498/aps.53.235 |
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ZHENG YONG-MEI, CHEN YU, MIAO RONG-ZHI.ON THE CONTINUOUS TRANSITION FROM PTC EFFECT TO GBBL CAPACITOR FOR BaTiO3 SEMICONDUCTING CERAMICS——APPLICATION OF THE GRAIN BOUNDARY BARRIER MODEL. Acta Physica Sinica, 1996, 45(9): 1543-1550.doi:10.7498/aps.45.1543 |
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