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Abstract

The gate capacitance-voltage (C-V) characteristic of strained SiGe pMOSFET is very different from that of bulk Si pMOSFET, and can be strongly affected by the channel doping. In this paper, we first study the formation mechanism of the "plateau" which can be observed in the gate C-V characteristics of strained SiGe pMOSFET, and then present a physics based analytical model to predict the gate C-V characteristic of strained SiGe pMOSFET. It is found that this plateau is channel doping dependent. The results from the model are compared with the experimental results and they are found to be in excellent agreement with each other, giving the evidence for its validity.

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1.
Funds:Project supported by the Research Fund of National Laboratory of Analog Integrated Circuits, China (Grant No. P140c090303110c0904), the Specialized Research Fund for the Doctoral Program of Higher Education of China (Grant No. JY0300122503), and the Fundamental Research Fund for the Central Universities, China (Grant Nos. K5051225014, K5051225004).

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Vol. 62, Issue 12 - 2013-06-20

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