[1] |
Zhang Ming-Mei, Guo Ya-Tao, Fu Xu-Ri, Li Meng-Lei, Ren Bao-Cang, Zheng Jun, Yuan Rui-Yang.Spin-switching effect and giant magnetoresistance in quantum structure of monolayer MoS2nanoribbons with ferromagnetic electrode. Acta Physica Sinica, 2023, 72(15): 157202.doi:10.7498/aps.72.20230483 |
[2] |
Song Li-Na, Lü Yan-Wu.Effect of inserted InGaN layer on the two-dimensional electron gas in AlxGa1–xN/InyGa1–yN/GaN. Acta Physica Sinica, 2021, 70(17): 177201.doi:10.7498/aps.70.20202223 |
[3] |
Cao Ya-Qing, Huang Huo-Lin, Sun Zhong-Hao, Li Fei-Yu, Bai Hong-Liang, Zhang Hui, Sun Nan, Yung C. Liang.Demonstration of wide-bandgap GaN-based heterojunction vertical Hall sensors for high-temperature magnetic field detection. Acta Physica Sinica, 2019, 68(15): 158502.doi:10.7498/aps.68.20190413 |
[4] |
Chen Qian, Li Qun, Yang Ying.Effects of AlGaN interlayer on scattering mechanisms in InAlN/AlGaN/GaN heterostructures. Acta Physica Sinica, 2019, 68(1): 017301.doi:10.7498/aps.68.20181663 |
[5] |
Hu Xiao-Ying, Guo Xiao-Xia, Hu Wen-Tao, Huhe Mandula, Zheng Xiao-Xia, Jing Li-Li.Spin-wave band gaps created by rotating square rods in triangular lattice magnonic crystals. Acta Physica Sinica, 2015, 64(10): 107501.doi:10.7498/aps.64.107501 |
[6] |
Li Ming, Zhang Rong, Liu Bin, Fu De-Yi, Zhao Chuan-Zhen, Xie Zhi-Li, Xiu Xiang-Qian, Zheng You-Dou.Study of Rashba spin splitting and intersubband spin-orbit coupling effect in AlGaN/GaN quantum wells. Acta Physica Sinica, 2012, 61(2): 027103.doi:10.7498/aps.61.027103 |
[7] |
Yang Fu-Jun, Ban Shi-Liang.Influence of optical-phonon scattering on electron mobility in wurtzite AlGaN/AlN/GaN heterostructures. Acta Physica Sinica, 2012, 61(8): 087201.doi:10.7498/aps.61.087201 |
[8] |
Wang Li-Yong, Cao Yong-Jun.Effects of arrangement of scatterers on band gaps of two-dimesional magnonic crystals. Acta Physica Sinica, 2011, 60(9): 097501.doi:10.7498/aps.60.097501 |
[9] |
Zhang Jin-Cheng, Zheng Peng-Tian, Dong Zuo-Dian, Duan Huan-Tao, Ni Jin-Yu, Zhang Jin-Feng, Hao Yue.The effect of back-barrier layer on the carrier distribution in the AlGaN/GaN double-heterostructure. Acta Physica Sinica, 2009, 58(5): 3409-3415.doi:10.7498/aps.58.3409 |
[10] |
Wei Wei, Lin Ruo-Bing, Feng Qian, Hao Yue.Current collapse mechanism of field-plated AlGaN/GaN HEMTs. Acta Physica Sinica, 2008, 57(1): 467-471.doi:10.7498/aps.57.467 |
[11] |
Zhou Wen-Zheng, Lin Tie, Shang Li-Yan, Huang Zhi-Ming, Zhu Bo, Cui Li-Jie, Gao Hong-Ling, Li Dong-Lin, Guo Shao-Ling, Gui Yong-Sheng, Chu Jun-Hao.Observations on subband electron properties in In0.65Ga0.35As/In0.52Al0.48As MM-HEMT with Si δ-doped on the barriers. Acta Physica Sinica, 2007, 56(7): 4143-4147.doi:10.7498/aps.56.4143 |
[12] |
Zhou Wen-Zheng, Lin Tie, Shang Li-Yan, Huang Zhi-Ming, Cui Li-Jie, Li Dong-Lin, Gao Hong-Ling, Zeng Yi-Ping, Guo Shao-Ling, Gui Yong-Sheng, Chu Jun-Hao.Weak anti-localization in InAlAs/InGaAs/InAlAs high mobility two-dimensional electron gas systems. Acta Physica Sinica, 2007, 56(7): 4099-4104.doi:10.7498/aps.56.4099 |
[13] |
Zhu Bo, Gui Yong-Sheng, Zhou Wen-Zheng, Shang Li-Yan, Qiu Zhi-Jun, Guo Shao-Ling, Zhang Fu-Jia, Chu Jun-Hao.Magnetoresistance oscillation of two-dimensional electrons gas in narrow gap dilute magnetic semiconductor. Acta Physica Sinica, 2006, 55(6): 2955-2960.doi:10.7498/aps.55.2955 |
[14] |
Zhu Bo, Gui Yong-Sheng, Qiu Zhi-Jun, Zhou Wen-Zheng, Yao Wei, Guo Shao-Ling, Chu Jun-Hao, Zhang Fu-Jia.Beating oscillation of two-dimensional electrons gas in narrow gap dilute magnetic semiconductor. Acta Physica Sinica, 2006, 55(2): 786-790.doi:10.7498/aps.55.786 |
[15] |
Shu Qiang, Shu Yong-Chun, Zhang Guan-Jie, Liu Ru-Bin, Yao Jiang-Hong, Pi Biao, Xing Xiao-Dong, Lin Yao-Wang, Xu Jing-Jun, Wang Zhan-Guo.Study of persistent photoconductivity and subband electronic properties of the two-dimensional electron gas in modulation doped GaAs/AlGaAs structure. Acta Physica Sinica, 2006, 55(3): 1379-1383.doi:10.7498/aps.55.1379 |
[16] |
Zhou Wen-Zheng, Yao Wei, Zhu Bo, Qiu Zhi-Jun, Guo Shao-Ling, Lin Tie, Cui Li-Jie, Gui Yong-Sheng, Chu Jun-Hao.Magneto-transport characteristics of two-dimensional electron gas for Si δ-doped InAlAs/InGaAs single quantum well. Acta Physica Sinica, 2006, 55(4): 2044-2048.doi:10.7498/aps.55.2044 |
[17] |
Kong Yue-Chan, Zheng You-Dou, Zhou Chun-Hong, Deng Yong-Zhen, Gu Shu-Lin, Shen Bo, Zhang Rong, Han Ping, Jiang Ruo-Lian, Shi Yi.Influence of polarizations and doping in AlGaN barrier on the two-dimensional electron-gas in AlGaN/GaN heterostruture. Acta Physica Sinica, 2004, 53(7): 2320-2324.doi:10.7498/aps.53.2320 |
[18] |
Zheng Ze-Wei, Shen Bo, Gui Yong-Sheng, Qiu Zhi-Jun, Tang Ning, Jiang Chun-Ping, Zhang Rong, Shi Yi, Zheng You-Dou, Guo Shao-Lin, Chu Jun-Hao.Study on the subband properties of AlxGa1-x N/GaN modulation-doped heterostructures. Acta Physica Sinica, 2004, 53(2): 596-600.doi:10.7498/aps.53.596 |
[19] |
DONG ZHENG-CHAO.QUANTUM ANALYTICAL THEORY FOR GIANT MAGNETORESISTANCE IN A MAGNETIC SANDWICH STRUCTURE. Acta Physica Sinica, 1997, 46(9): 1801-1807.doi:10.7498/aps.46.1801 |
[20] |
WEI YA-YI, SHEN JIN-XI, ZHENG GUO-ZHEN, GUO SHAO-LING, TANG DING-YUAN, PENG ZHENG-FU, ZHANG YUN-QIANG.STUDY OF SdH OSCILLATIONS OF 2-D ELECTRON GAS IN Si δ-DOPED AlxGa1-xAs/GaAs HETEROJUNCTION. Acta Physica Sinica, 1994, 43(2): 282-288.doi:10.7498/aps.43.282 |