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.3D Simulation Study on the Mechanism of Influence Factor of Total Dose Ionizing Effect on SiGe HBT. Acta Physica Sinica, 2021, (): .doi:10.7498/aps.70.20211795 |
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Xu Ting, Wang Zi-Shuai, Li Xuan-Hua, Sha Wei E. I..Loss mechanism analyses of perovskite solar cells with equivalent circuit model. Acta Physica Sinica, 2021, 70(9): 098801.doi:10.7498/aps.70.20201975 |
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Li Yu-Han, Deng Lian-Wen, Luo Heng, He Long-Hui, He Jun, Xu Yun-Chao, Huang Sheng-Xiang.Equivalent circuit model and microwave reflection loss mechanism of double-layer spiral-ring metasurface embedded composite microwave absorber. Acta Physica Sinica, 2019, 68(9): 095201.doi:10.7498/aps.68.20181960 |
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Lou Guo-Feng, Yu Xin-Jie, Lu Shi-Hua.Equivalent circuit model for plate-type magnetoelectric laminate composite considering an interface coupling factor. Acta Physica Sinica, 2018, 67(2): 027501.doi:10.7498/aps.67.20172080 |
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Jiang Yan-Nan, Wang Yang, Ge De-Biao, Li Si-Min, Cao Wei-Ping, Gao Xi, Yu Xin-Hua.An ultra-wideband absorber based on graphene. Acta Physica Sinica, 2016, 65(5): 054101.doi:10.7498/aps.65.054101 |
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Wang Yan, Yang Jiu, Wang Li-Dan, Duan Shu-Kai.Research of coupling behavior based on series-parallel flux-controlled memristor. Acta Physica Sinica, 2015, 64(23): 237303.doi:10.7498/aps.64.237303 |
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Liu Jing, Wu Yu, Gao Yong.Research on SiGe heterojunction bipolar transistor with a trench-type emitter. Acta Physica Sinica, 2014, 63(14): 148503.doi:10.7498/aps.63.148503 |
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Wang Xiu-Zhi, Gao Jin-Song, Xu Nian-Xi.Quick analysis of miniaturized-element frequency selective surface that loaded with lumped elements by using an equivalent circuit model. Acta Physica Sinica, 2013, 62(20): 207301.doi:10.7498/aps.62.207301 |
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Hu Feng-Wei, Bao Bo-Cheng, Wu Hua-Gan, Wang Chun-Li.Equivalent circuit analysis model of charge-controlled memristor and its circuit characteristics. Acta Physica Sinica, 2013, 62(21): 218401.doi:10.7498/aps.62.218401 |
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Liang Yan, Yu Dong-Sheng, Chen Hao.A novel meminductor emulator based on analog circuits. Acta Physica Sinica, 2013, 62(15): 158501.doi:10.7498/aps.62.158501 |
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Bai Chun-Jiang, Li Jian-Qing, Hu Yu-Lu, Yang Zhong-Hai, Li Bin.Calculation of beam-wave interaction of coupled-cavity TWT using equivalent circuit model. Acta Physica Sinica, 2012, 61(17): 178401.doi:10.7498/aps.61.178401 |
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Zhang Bin, Yang Yin-Tang, Li Yue-Jin, Xu Xiao-Bo.Electrical behavior research of silicon-on-insulator SiGe heterojunction bipolar transistor. Acta Physica Sinica, 2012, 61(23): 238502.doi:10.7498/aps.61.238502 |
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Guo Fan, Li Yong-Dong, Wang Hong-Guang, Liu Chun-Liang, Hu Yi-Xiang, Zhang Peng-Fei, Ma Meng.Particle-in-cell simulation of outer magnetically insulated transmission line of Z-pinch accelerator. Acta Physica Sinica, 2011, 60(10): 102901.doi:10.7498/aps.60.102901 |
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Hu Hui-Yong, Shu Yu, Zhang He-Ming, Song Jian-Jun, Xuan Rong-Xi, Qing Shan-Shan, Qu Jiang-Tao.Collector junction depletion-layer width model of SiGeheterojunction bipolar transistor with intrinsic SiGe layer. Acta Physica Sinica, 2011, 60(1): 017303.doi:10.7498/aps.60.017303 |
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Xiao Ying, Zhang Wan-Rong, Jin Dong-Yue, Chen Liang, Wang Ren-Qing, Xie Hong-Yun.Effect of bandgap engineering on thermal characteristic of radiofrequency power SiGe heterojunction bipolar transistor. Acta Physica Sinica, 2011, 60(4): 044402.doi:10.7498/aps.60.044402 |
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Xu Xiao-Bo, Zhang He-Ming, Hu Hui-Yong.Improved base-collector depletion charge and capacitance model for SiGe HBT on thin-film SOI. Acta Physica Sinica, 2011, 60(11): 118501.doi:10.7498/aps.60.118501 |
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Xu Xiao-Bo, Zhang He-Ming, Hu Hui-Yong, Xu Li-Jun, Ma Jian-Li.A collector space charge region model for SiGe HBT on thin-film SOI. Acta Physica Sinica, 2011, 60(7): 078502.doi:10.7498/aps.60.078502 |
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Pan Hai-Lin, Cheng Jin-Ke, Zhao Zhen-Jie, He Jia-Kang, Ruan Jian-Zhong, Yang Xie-Long, Yuan Wang-Zhi.Study of the LC resonance giant magneto-impedance effect. Acta Physica Sinica, 2008, 57(5): 3230-3236.doi:10.7498/aps.57.3230 |
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Zhou Tie-Ge, Song Feng-Bin, Zuo Tao, Gu Jing, Xia Hou-Hai, Hu Ya-Ting, Zhao Xin-Jie, Fang Lan, Yan Shao-Lin.The model of capacitively coupled intrinsic Josephson junction array and its chaotic behavior. Acta Physica Sinica, 2007, 56(11): 6307-6314.doi:10.7498/aps.56.6307 |
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Lü Yi, Zhang He-Ming, Dai Xian-Ying, Hu Hui-Yong, Shu Bin.Junction capacitance models of SiGe HBT. Acta Physica Sinica, 2004, 53(9): 3239-3244.doi:10.7498/aps.53.3239 |
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