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Chen Long, Chen Cheng-Ke, Li Xiao, Hu Xiao-Jun.Effects of oxidation on silicon vacancy photoluminescence and microstructure of separated domain formed nanodiamond films. Acta Physica Sinica, 2019, 68(16): 168101.doi:10.7498/aps.68.20190422 |
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Huang Bin-Bin, Xiong Chuan-Bing, Tang Ying-Wen, Zhang Chao-Yu, Huang Ji-Feng, Wang Guang-Xu, Liu Jun-Lin, Jiang Feng-Yi.Changes of stress and luminescence properties in GaN-based LED films before and after transferring the films to a flexible layer on a submount from the silicon epitaxial substrate. Acta Physica Sinica, 2015, 64(17): 177804.doi:10.7498/aps.64.177804 |
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Zhang Chao-Yu, Xiong Chuan-Bing, Tang Ying-Wen, Huang Bin-Bin, Huang Ji-Feng, Wang Guang-Xu, Liu Jun-Lin, Jiang Feng-Yi.Changes of micro zone luminescent properties and stress of GaN-based light emitting diode film grown on patterned silicon substrate, induced by the removal of the substrate and AlN buffer layer. Acta Physica Sinica, 2015, 64(18): 187801.doi:10.7498/aps.64.187801 |
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Zhu Min, Li Xiao-Hong, Li Guo-Qiang, Chang Li-Yang, Xie Chang-Xin, Qiu Rong, Li Jia-Wen, Huang Wen-Hao.Photoluminescence of monocrystalline silicon irradiated by femtosecond pulsed laser. Acta Physica Sinica, 2014, 63(5): 057801.doi:10.7498/aps.63.057801 |
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Zhang Zheng, Xu Zhi-Mou, Sun Tang-You, Xu Hai-Feng, Chen Cun-Hua, Peng Jing.Study on porous silicon template for nanoimprint lithography. Acta Physica Sinica, 2014, 63(1): 018102.doi:10.7498/aps.63.018102 |
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Liao Wu-Gang, Zeng Xiang-Bin, Wen Guo-Zhi, Cao Chen-Chen, Ma Kun-Peng, Zheng Ya-Juan.Photoluminescences and structrue performances of Si-rich silicon nitride thin films containing Si quantum dots. Acta Physica Sinica, 2013, 62(12): 126801.doi:10.7498/aps.62.126801 |
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Pan Shu-Wan, Chen Song-Yan, Zhou Bi, Huang Wei, Li Cheng, Lai Hong-Kai, Wang Jia-Xian.Photoluminescence properties of selenium nanocrystals on Si(100) substrate formed by rapid thermal annealing. Acta Physica Sinica, 2013, 62(17): 177802.doi:10.7498/aps.62.177802 |
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Wang Kai-Yue, Li Zhi-Hong, Gao Kai, Zhu Yu-Mei.Photoluminescence studies of electron irradiated diamond. Acta Physica Sinica, 2012, 61(9): 097803.doi:10.7498/aps.61.097803 |
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Li Zhuo-Xin, Wang Dan-Ni, Wang Bao-Yi, Xue De-Sheng, Wei Long, Qin Xiu-Bo.Study of annihilation behavior of positronium in porous silicon in different atmospheres. Acta Physica Sinica, 2010, 59(9): 6647-6652.doi:10.7498/aps.59.6647 |
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Yu Wei, Li Ya-Chao, Ding Wen-Ge, Zhang Jiang-Yong, Yang Yan-Bin, Fu Guang-Sheng.Bonding configurations and photoluminescence of amorphous Si nanoparticles in SiNx films. Acta Physica Sinica, 2008, 57(6): 3661-3665.doi:10.7498/aps.57.3661 |
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Miao Jing-Wei, Wang Pei-Lu, Zhu Zhou-Sen, Yuan Xue-Dong, Wang Hu, Yang Chao-Wen, Shi Mian-Gong, Miao Lei, Sun Wei-Li, Zhang Jing, Liao Xue-Hua.Photoluminescence spectrum of monocrystalline Si implanted by nitrogen cluster ions. Acta Physica Sinica, 2008, 57(4): 2174-2178.doi:10.7498/aps.57.2174 |
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Yao Zhi-Tao, Sun Xin-Rui, Xu Hai-Jun, Jiang Wei-Fen, Xiao Shun-Hua, Li Xin-Jian.The structure and photoluminescence properties of ZnO/silicon nanoporous pillar array. Acta Physica Sinica, 2007, 56(10): 6098-6103.doi:10.7498/aps.56.6098 |
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Qiu Xue-Jun, Zhang Yun-Peng, He Zheng-Hong, Bai Lang, Liu Guo-Lei, Wang Yue, Chen Peng, Xiong Zu-Hong.Control of coercivity of iron films deposited on porous silicon substrates. Acta Physica Sinica, 2006, 55(11): 6101-6107.doi:10.7498/aps.55.6101 |
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Bai Ying, Lan Yan-Na, Mo Yu-Jun.Temperature measurement from the Raman spectra of porous silicon. Acta Physica Sinica, 2005, 54(10): 4654-4658.doi:10.7498/aps.54.4654 |
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Liu Xiao-Bing, Shi Xiang-Hua, Liao Tai-Chang, Ren Peng, Liu Yue, Liu Yi, Xiong Zu-Hong, Ding Xun-Min, Hou Xiao-Yuan.The microstructure and characteristics of luminescent porous silicon film prepared by the physicochemical sonic-vacating method. Acta Physica Sinica, 2005, 54(1): 416-421.doi:10.7498/aps.54.416 |
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Huang Kai, Wang Si-Hui, Shi Yi, Qin Guo-Yi, Zhang Rong, Zheng You-Dou.Effect of inner electric field on the photoluminescence spectrum of nanosilicon. Acta Physica Sinica, 2004, 53(4): 1236-1242.doi:10.7498/aps.53.1236 |
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Xu Da-Yin, Liu Yan-Ping, He Zhi-Wei, Fang Ze-Bo, Liu Xue-Qin, Wang Yin-Yue.The behavior of photoluminescence from SiC:Tb films deposited on porous silicon substrate. Acta Physica Sinica, 2004, 53(8): 2694-2698.doi:10.7498/aps.53.2694 |
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Peng Ai-Hua, Xie Er-Qing, Jiang Ning, Zhang Zhi-Min, Li Peng, He De-Yan.The photoluminescence characterization of rare earths (Tb, Gd) embedded into por ous silicon. Acta Physica Sinica, 2003, 52(7): 1792-1796.doi:10.7498/aps.52.1792 |
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MA SHU-YI, QIN GUO-GANG, YOU LI-PING, WANG YIN-YUE.COMPARATIVE STUDY ON PHOTOLUMINESCENCE FROM Si-CONTAINING SILICON OXIDE FILMS AND Ge-CONTAINING SILICON OXIDE FILMS. Acta Physica Sinica, 2001, 50(8): 1580-1584.doi:10.7498/aps.50.1580 |
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LIANG ER-JUN, CHAO MING-JU.LASER-INDUCED LATTICE DEFORMATION OF POROUS SILICON REVEALED BY RAMAN AND PHOTOLUMINESCENCE SPECTROSCOPIES. Acta Physica Sinica, 2001, 50(11): 2241-2246.doi:10.7498/aps.50.2241 |
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