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Abstract

The capacitance model is fundamental for the transient analysis, AC analysis and noise analysis of uniaxially strained Si MOSFET device and circuit. Firstly, the 16-differential capacitance model for uniaxially strained Si NMOSFET is developed. Secondly, the simulation results from that model match the experimental results well, which validates the accuracy of the model. Meanwhile the simulated relations of key gate capacitance Cgg to stress intensity, bias voltage，channel length and concentration of poly gate are obtained and analyzed, showing that the value of Cgg is a little larger than that of strainless bulk device while the changing tendency keeps the same.

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Funds:Project supported by Research Fund for the Doctoral Program of Higher Education of China (Grant No. JY0300122503) and Fundamental Research Funds for the Central Universities, China (Grant Nos. K5051225014, K5051225004).

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Vol. 64, Issue 6 - 2015-03-20

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