| [1] |
Cao Yang, Xi Kai, Xu Yan-Nan, Li Mei, Li Bo, Bi Jin-Shun, Liu Ming.Total ionizing dose effects ofγand X-rays on 55 nm silicon-oxide-nitride-oxide-silicon single flash memory cell. Acta Physica Sinica, 2019, 68(3): 038501.doi:10.7498/aps.68.20181661 |
| [2] |
Chen Qian, Ma Ying-Qi, Chen Rui, Zhu Xiang, Li Yue, Han Jian-Wei.Characteristics of latch-up current of dose rate effect by laser simulation. Acta Physica Sinica, 2019, 68(12): 124202.doi:10.7498/aps.68.20190237 |
| [3] |
Li Xiao-Long, Lu Wu, Wang Xin, Guo Qi, He Cheng-Fa, Sun Jing, Yu Xin, Liu Mo-Han, Jia Jin-Cheng, Yao Shuai, Wei Xin-Yu.Estimation of low-dose-rate degradation on bipolar linear circuits using different accelerated evaluation methods. Acta Physica Sinica, 2018, 67(9): 096101.doi:10.7498/aps.67.20180027 |
| [4] |
Zheng Qi-Wen, Cui Jiang-Wei, Wang Han-Ning, Zhou Hang, Yu De-Zhao, Wei Ying, Su Dan-Dan.Dose-rate sensitivity of deep sub-micro complementary metal oxide semiconductor process. Acta Physica Sinica, 2016, 65(7): 076102.doi:10.7498/aps.65.076102 |
| [5] |
Ma Wu-Ying, Lu Wu, Guo Qi, He Cheng-Fa, Wu Xue, Wang Xin, Cong Zhong-Chao, Wang Bo, Maria.Analyses of ionization radiation damage and dose rate effect of bipolar voltage comparator. Acta Physica Sinica, 2014, 63(2): 026101.doi:10.7498/aps.63.026101 |
| [6] |
Sun Ya-Bin, Fu Jun, Xu Jun, Wang Yu-Dong, Zhou Wei, Zhang Wei, Cui Jie, Li Gao-Qing, Liu Zhi-Hong.Study on ionization damage of silicon-germanium heterojunction bipolar transistors at various dose rates. Acta Physica Sinica, 2013, 62(19): 196104.doi:10.7498/aps.62.196104 |
| [7] |
Wang Feng, Zhao Zheng-Yu, Chang Shan-Shan, Ni Bin-Bin, Gu Xu-Dong.Raytracing of extreamely low frequency waves radiated from ionospheric artificial modulation at low latitude. Acta Physica Sinica, 2012, 61(19): 199401.doi:10.7498/aps.61.199401 |
| [8] |
Shang Huai-Chao, Liu Hong-Xia, Zhuo Qing-Qing.Degradation mechanism of SOI NMOS devices exposed to 60Co γ-ray at low dose rate. Acta Physica Sinica, 2012, 61(24): 246101.doi:10.7498/aps.61.246101 |
| [9] |
Chen Guo-Yun, Xin Yong, Huang Fu-Cheng, Wei Zhi-Yong, Lei Sheng-Jie, Huang San-Bo, Zhu Li, Zhao Jing-Wu, Ma Jia-Yi.Performances of a boron-lined ionization chamber used in neutron/-ray mixed field of reactors. Acta Physica Sinica, 2012, 61(8): 082901.doi:10.7498/aps.61.082901 |
| [10] |
Lan Bo, Gao Bo, Cui Jiang-Wei, Li Ming, Wang Yi-Yuan, Yu Xue-Feng, Ren Di-Yuan.Theorical model of enhanced low dose rate sensitivity observed in p-type metal-oxide-semiconductor field-effect transistor. Acta Physica Sinica, 2011, 60(6): 068702.doi:10.7498/aps.60.068702 |
| [11] |
Wang Yi-Yuan, Lu Wu, Ren Di-Yuan, Guo Qi, Yu Xue-Feng, He Cheng-Fa, Gao Bo.Degradation and dose rate effects of bipolar linearregulator on ionizing radiation. Acta Physica Sinica, 2011, 60(9): 096104.doi:10.7498/aps.60.096104 |
| [12] |
He Bao-Ping, Yao Zhi-Bin.Research on prediction model of radiation effect for complementary metal oxide semiconductor devices at low dose rate irradiation in space environment. Acta Physica Sinica, 2010, 59(3): 1985-1990.doi:10.7498/aps.59.1985 |
| [13] |
Zheng Yu-Zhan, Lu Wu, Ren Di-Yuan, Wang Yi-Yuan, Guo Qi, Yu Xue-Feng, He Cheng-Fa.Characteristics of high- and low-dose-rate damage for domestic npn transistors of various emitter areas. Acta Physica Sinica, 2009, 58(8): 5572-5577.doi:10.7498/aps.58.5572 |
| [14] |
Huang Yan-Ping, Qi Chun-Yuan.Measurement of refractive index profile of holey fiber using quantitative phase tomography. Acta Physica Sinica, 2006, 55(12): 6395-6398.doi:10.7498/aps.55.6395 |
| [15] |
He Bao-Ping, Guo Hong-Xia, Gong Jian-Cheng, Wang Gui-Zhen, Luo Yin-Hong, Li Yong-Hong.Prediction of failure time for floating gate ROM devices at low dose rate in space radiation environment. Acta Physica Sinica, 2004, 53(9): 3125-3129.doi:10.7498/aps.53.3125 |
| [16] |
He Bao-Ping, Wang Gui-Zhen, Zhou Hui, Gong Jian-Cheng, Luo Yin-Hong, Jiang Jing-He.Predicting NMOS device radiation response at different dose rates in γ-ray environment. Acta Physica Sinica, 2003, 52(1): 188-191.doi:10.7498/aps.52.188 |
| [17] |
MU WEI-BING, CHEN PAN-XUN.MONTE-CARLO CALCULATION OF X-RAY DOSE ENHANCEMENT FACTOR NEARBY HIGH Z METAL CONNECTED INTERFACE. Acta Physica Sinica, 2001, 50(2): 189-192.doi:10.7498/aps.50.189 |
| [18] |
ZHANG TING-QING, LIU CHUAN-YANG, LIU JIA-LU, WANG JIAN-PING, HUANG ZHI, XU NA-JUN, HE BAO-PING, PENG HONG-LUN, YAO YU-JUAN.RADIATION EFFECTS OF MOS DEVICE AT LOW DOSE RATE AND LOW TEMPERATURE. Acta Physica Sinica, 2001, 50(12): 2434-2438.doi:10.7498/aps.50.2434 |
| [19] |
GUO HONG-XIA, CHEN YU-SHENG, ZHANG YI-MEN, WU GUO-RONG, ZHOU HUI, GUAN YING, HAN FU-BIN, GONG JIAN-CHENG.USING MULTIPLE PARALLEL PLATE ALUMINUM IONIZATION CHAMBER FOR DETERMINING DOSE DISTRIBUTION AT AND NEAR THE INTERFACE OF DIFFERENT MATERIALS AND ITS MONTE CARLO SIMULATION. Acta Physica Sinica, 2001, 50(8): 1545-1548.doi:10.7498/aps.50.1545 |
| [20] |
.. Acta Physica Sinica, 1936, 2(1): 1-9.doi:10.7498/aps.2.1 |
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