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Cao Wen-Yu, Zhang Ya-Ting, Wei Yan-Feng, Zhu Li-Juan, Xu Ke, Yan Jia-Sheng, Zhou Shu-Xing, Hu Xiao-Dong.Strain modulation effect of superlattice interlayer on InGaN/GaN multiple quantum well. Acta Physica Sinica, 2024, 73(7): 077201.doi:10.7498/aps.73.20231677 |
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Liu Heng, Li Ye, Du Meng-Chao, Qiu Peng, He Ying-Feng, Song Yi-Meng, Wei Hui-Yun, Zhu Xiao-Li, Tian Feng, Peng Ming-Zeng, Zheng Xin-He.Atomic layer deposition of AlGaN alloy and its application in quantum dot sensitized solar cells. Acta Physica Sinica, 2023, 72(13): 137701.doi:10.7498/aps.72.20230113 |
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Liu Xu-Yang, Zhang He-Qiu, Li Bing-Bing, Liu Jun, Xue Dong-Yang, Wang Heng-Shan, Liang Hong-Wei, Xia Xiao-Chuan.Characteristics of AlGaN/GaN high electron mobility transistor temperature sensor. Acta Physica Sinica, 2020, 69(4): 047201.doi:10.7498/aps.69.20190640 |
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Qiao Jian-Liang, Xu Yuan, Gao You-Tang, Niu Jun, Chang Ben-Kang.Quantum efficiency for reflection-mode varied doping negative-electron-affinity GaN photocathode. Acta Physica Sinica, 2017, 66(6): 067903.doi:10.7498/aps.66.067903 |
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Zhao Feng-Qi, Zhang Min, Li Zhi-Qiang, Ji Yan-Ming.Effects of optical phonon and built-in electric field on the binding energy of bound polarons in a wurtzite In0.19Ga0.81N/GaN quantum well. Acta Physica Sinica, 2014, 63(17): 177101.doi:10.7498/aps.63.177101 |
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Zhang Pan-Jun, Sun Hui-Qing, Guo Zhi-You, Wang Du-Yang, Xie Xiao-Yu, Cai Jin-Xin, Zheng Huan, Xie Nan, Yang Bin.The spectrum-control of dual-wavelength LED with quantum dots planted in quantum wells. Acta Physica Sinica, 2013, 62(11): 117304.doi:10.7498/aps.62.117304 |
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Chen Hao-Ran, Yang Lin-An, Zhu Zhang-Ming, Lin Zhi-Yu, Zhang Jin-Cheng.Theoretical study on degradation phenomenon on AlGaN/GaN resonant tunneling diode. Acta Physica Sinica, 2013, 62(21): 217301.doi:10.7498/aps.62.217301 |
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Chen Jun, Fan Guang-Han, Zhang Yun-Yan.The investigation of performance improvement of GaN-based dual-wavelength light-emitting diodes with various thickness of quantum barriers. Acta Physica Sinica, 2012, 61(17): 178504.doi:10.7498/aps.61.178504 |
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Wang Du-Yang, Sun Hui-Qing, Xie Xiao-Yu, Zhang Pan-Jun.Theoretical study of luminance of GaN quantum dots planted in quantum well. Acta Physica Sinica, 2012, 61(22): 227303.doi:10.7498/aps.61.227303 |
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Wang Yan-Wen, Wu Hua-Rui.Exciton states and optical properties in zinc-blende GaN/AlGaN quantum dot. Acta Physica Sinica, 2012, 61(10): 106102.doi:10.7498/aps.61.106102 |
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Zhang Yun-Yan, Fan Guan-Han.Theoretical study of GaN interval layers and quantum well barrier layers of different doping types in dual-wavelength LED. Acta Physica Sinica, 2011, 60(1): 018502.doi:10.7498/aps.60.018502 |
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Jin Yu-Zhe, Hu Yi-Pei, Zeng Xiang-Hua, Yang Yi-Jun.Gamma radiation effect on GaN-based blue light-emitting diodes with multi-quantum well. Acta Physica Sinica, 2010, 59(2): 1258-1262.doi:10.7498/aps.59.1258 |
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Feng Qian, Hao Yue, Yue Yuan-Zheng.Study of AlGaN/GaN MOSHEMT device with Al2O3 insulating film. Acta Physica Sinica, 2008, 57(3): 1886-1890.doi:10.7498/aps.57.1886 |
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Xie Zi-Li, Zhang Rong, Xiu Xiang-Qian, Han Ping, Liu Bin, Chen Lin, Yu Hui-Qiang, Jiang Ruo-Lian, Shi Yi, Zheng You-Dou.MOCVD growth and characteristics of high quality AlGaN used in the DBR structure of ultraviolet detector. Acta Physica Sinica, 2007, 56(11): 6717-6721.doi:10.7498/aps.56.6717 |
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Li Jiang-Fan, Shan Shu-Min, Yang Jian-Kun, Jiang Zong-Fu.An explicit analytical solution of the Schr?dinger equation for a detuned quantum frequency conversion system. Acta Physica Sinica, 2007, 56(10): 5597-5601.doi:10.7498/aps.56.5597 |
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Zhou Mei, Zuo Shu-Hua, Zhao De-Gang.A new Schottky barrier structure of GaN-based ultraviolet photodetector. Acta Physica Sinica, 2007, 56(9): 5513-5517.doi:10.7498/aps.56.5513 |
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Shen Ye, Xing Huai-Zhong, Yu Jian-Guo, Lü Bin, Mao Hui-Bing, Wang Ji-Qing.Curie-temperature modulation by polarization-induced built-in electric fields in Mn δ-doped GaN/AlGaN quantum wells. Acta Physica Sinica, 2007, 56(6): 3453-3457.doi:10.7498/aps.56.3453 |
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You Da, Xu Jin-Tong, Tang Ying-Wen, He Zheng, Xu Yun-Hua, Gong Hai-Mei.Research of two-dimensional hole gas in p-GaN/Al0.35Ga0.65N/GaN strained quantum-well. Acta Physica Sinica, 2006, 55(12): 6600-6605.doi:10.7498/aps.55.6600 |
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Zhang Jie-Fang, Xu Chang-Zhi, He Bao-Gang.The variable separation approach and study on solving the variable-coefficient nonlinear Schr?dinger equation. Acta Physica Sinica, 2004, 53(11): 3652-3656.doi:10.7498/aps.53.3652 |
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LIU JIAN-BO, CAI XI-PING.A MACROSCOPICAL SIMULATION SOLUTION TO THE ONE-DIMENSIONAL STATIONARY STATE SCHRDINGER EQUATION. Acta Physica Sinica, 2001, 50(5): 820-824.doi:10.7498/aps.50.820 |
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