Construction of a fully transparent β-Ga2O3 multi-mode solar-blind detection experimental system based on back incidence technology

DONG Dianmeng; WANG Jingchen; XU Xiaoyun; PENG Min; WANG Zechuan; WANG Cheng; WU Zhenping

doi:10.7498/aps.74.20251009

Abstract

To meet the urgent demand for high-performance photodetectors in emerging solar-blind ultraviolet communication applications, this study systematically designs and implements a fully transparent β-Ga₂O₃ solar-blind photodetector based on a back-illumination architecture. The device is fabricated using RF magnetron sputtering to epitaxially grow high-quality β-Ga₂O₃ films (~300 nm in thickness, ~4.98±0.05 eV in bandgap) on double-polished sapphire substrates, with indium tin oxide (ITO) interdigitated electrodes forming efficient quasi-Ohmic contacts with n-type Ga₂O₃. The core advantage of this design lies in exploiting the high deep-UV transmittance of double-polished sapphire substrates, enabling incident photons to completely bypass the UV-absorbing ITO electrodes and eliminate photon loss caused by electrode shadowing effects in traditional front-illumination configurations. Consequently, the device demonstrates exceptional optoelectronic performance: a maximum responsivity of 0.46 A/W corresponding to an external quantum efficiency of 222.4%, an outstanding UV/visible rejection ratio of 1.2×10⁴, a minimum noise equivalent power of 1.52 pW/Hz^1/2, and a peak specific detectivity of 1.39×10¹¹ Jones, with fast response times of 24 μs (rise) and 1.24 ms (decay). Building on this high-performance detector platform, we further explore its multifunctional application potential by constructing a polarization detection system that utilizes the intrinsic lattice anisotropy of monoclinic β-Ga₂O₃, and successfully demonstrating a non-line-of-sight (NLOS) UV communication system that validates high-fidelity information transmission in complex scattering channels. This work provides effective physical insights and experimental basis for developing next-generation Ga₂O₃-based optoelectronic devices with integrated high sensitivity, polarization resolution, and NLOS communication capabilities, showing promising applications in secure communications and polarization imaging.

Keywords:

Ga₂O₃ /
solar-blind photodetector /
polarization detection /
non-line-of-sight solar-blind UV communication

Authors and contacts

Corresponding author: XU Xiaoyun, xuxiaoyun@gcu.edu.cn

Funds: Project supported by the National Natural Science Foundation of China (Grant No. 12474065), the Fund of State Key Laboratory of Information Photonics and Optical Communications, China (Grant No. IPOC2025ZR05), and the Excellent Ph.D. Students Foundation of Beijing University of Posts and Telecommunications, China (Grant No. CX20253002).

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[12]
[13]
[14]
[15]
[16]
[17]
[18]
[19]
[20]
[21]
[22]
[23]
[24]
[25]
[26]
[27]
[28]
[29]
[30]
[31]
[32]
[33]
[34]
[35]
[36]
[37]
[38]
[39]
[40]

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[7]
[8]
[9]
[10]
[11]
[12]
[13]
[14]
[15]
[16]
[17]
[18]
[19]
[20]
[21]
[22]
[23]
[24]
[25]
[26]
[27]
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Vol. 74, Issue 22 - 2025-11-20

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