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Li Gui-Hua, Zhang Meng-Ya, Ma Hui, Tian Yue, Jiao An-Xin, Zheng Lin-Qi, Wang Chang, Chen Ming, Liu Xiang-Dong, Li Shuang, Cui Qing-Qiang, Li Guan-Hua.Low temperature-promoted surface plasmon resonance effect and ultrasensitive surface-enhanced Raman scattering detection of creatinine. Acta Physica Sinica, 2022, 71(14): 146101.doi:10.7498/aps.71.20220151 |
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Li Zhe-Fu, Jia Yan-Yan, Liu Ren-Duo, Xu Yu-Hai, Wang Guang-Hong, Xia Xiao-Bin.Irradiation effect of Sm2Co17 type permanent magnets. Acta Physica Sinica, 2017, 66(22): 226101.doi:10.7498/aps.66.226101 |
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Zhao Qi-Feng, Zhuang Yi-Qi, Bao Jun-Lin, Hu Wei.Quantitative separation of radiation induced charges for NPN bipolar junction transistors based on 1/f noise model. Acta Physica Sinica, 2015, 64(13): 136104.doi:10.7498/aps.64.136104 |
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Liu Hong-Xia, Wang Zhi, Zhuo Qing-Qing, Wang Qian-Qiong.Influence of channel length on PD SOI PMOS devices under total dose irradiation. Acta Physica Sinica, 2014, 63(1): 016102.doi:10.7498/aps.63.016102 |
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Li Ming-Jie, Gao Hong, Li Jiang-Lu, Wen Jing, Li Kai, Zhang Wei-Guang.Electrical properties of single ZnO nanobelt in low temperature. Acta Physica Sinica, 2013, 62(18): 187302.doi:10.7498/aps.62.187302 |
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He Yong-Zhou, Zhou Qiao-Gen.Magnetic properties of permanent magnet for cryogenic undulator of permanent Shanghai synchrotron radiation facility. Acta Physica Sinica, 2013, 62(4): 044106.doi:10.7498/aps.62.044106 |
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Sun Ya-Bin, Fu Jun, Xu Jun, Wang Yu-Dong, Zhou Wei, Zhang Wei, Cui Jie, Li Gao-Qing, Liu Zhi-Hong.Study on ionization damage of silicon-germanium heterojunction bipolar transistors at various dose rates. Acta Physica Sinica, 2013, 62(19): 196104.doi:10.7498/aps.62.196104 |
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Shang Huai-Chao, Liu Hong-Xia, Zhuo Qing-Qing.Degradation mechanism of SOI NMOS devices exposed to 60Co γ-ray at low dose rate. Acta Physica Sinica, 2012, 61(24): 246101.doi:10.7498/aps.61.246101 |
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Jin Yu-Zhe, Hu Yi-Pei, Zeng Xiang-Hua, Yang Yi-Jun.Gamma radiation effect on GaN-based blue light-emitting diodes with multi-quantum well. Acta Physica Sinica, 2010, 59(2): 1258-1262.doi:10.7498/aps.59.1258 |
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He Bao-Ping, Yao Zhi-Bin.Research on prediction model of radiation effect for complementary metal oxide semiconductor devices at low dose rate irradiation in space environment. Acta Physica Sinica, 2010, 59(3): 1985-1990.doi:10.7498/aps.59.1985 |
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Li Xu-Jie, Nie Qiu-Hua, Dai Shi-Xun, Xu Tie-Feng, Shen Xiang, Zhang Xiang-Hua.Low temperature emission characteristics of an ytterbium sensitized erbium-doped tellurite glass. Acta Physica Sinica, 2008, 57(5): 3001-3005.doi:10.7498/aps.57.3001 |
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Qiao Hui, Liao Yi, Hu Wei-Da, Deng Yi, Yuan Yong-Gang, Zhang Qin-Yao, Li Xiang-Yang, Gong Hai-Mei.Real-time study of γ irradiation on Hg1-xCdxTe focal plane photodiodes. Acta Physica Sinica, 2008, 57(11): 7088-7093.doi:10.7498/aps.57.7088 |
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Yang Li-Xia, Du Lei, Bao Jun-Lin, Zhuang Yi-Qi, Chen Xiao-Dong, Li Qun-Wei, Zhang Ying, Zhao Zhi-Gang, He Liang.The effect of 60Co γ-ray irradiation on the 1/f noise of Schottky barrier diodes. Acta Physica Sinica, 2008, 57(9): 5869-5874.doi:10.7498/aps.57.5869 |
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Li Rui-Min, Du Lei, Zhuang Yi-Qi, Bao Jun-Lin.A 1/f noise based research of radiation induced interface trap buildup process. Acta Physica Sinica, 2007, 56(6): 3400-3406.doi:10.7498/aps.56.3400 |
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Xu Geng-Zhao, Liang Hu, Bai Yong-Qiang, Lau Kei-May, Zhu Xing.Study of temperature dependent electroluminescence of InGaN/GaN multiple quantum wells using low temperature scanning near-field optical microscopy. Acta Physica Sinica, 2005, 54(11): 5344-5349.doi:10.7498/aps.54.5344 |
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He Bao-Ping, Guo Hong-Xia, Gong Jian-Cheng, Wang Gui-Zhen, Luo Yin-Hong, Li Yong-Hong.Prediction of failure time for floating gate ROM devices at low dose rate in space radiation environment. Acta Physica Sinica, 2004, 53(9): 3125-3129.doi:10.7498/aps.53.3125 |
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Yang Lin-An, Zhang Yi-Men, Yu Chun-Li, Zhang Yu-Ming.Trapping effect modeling for SiC power MESFETs. Acta Physica Sinica, 2003, 52(2): 302-306.doi:10.7498/aps.52.302 |
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Tang Xiao-Yan, Zhang Yi-Men, Zhang Yu-Ming, Gao Jin-Xia.Study of the effect of interface state charges on field-effect mobility of n-channel 6H-SiC MOSFET. Acta Physica Sinica, 2003, 52(4): 830-833.doi:10.7498/aps.52.830 |
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REN HONG-XIA, HAO YUE, XU DONG-GANG.STUDY ON HOT-CARRIER-EFFECT FOR GROOVED-GATE N-CHANNEL METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT-TRANSISTOR. Acta Physica Sinica, 2000, 49(7): 1241-1248.doi:10.7498/aps.49.1241 |
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WANG JIAN-PING, XU NA-JUN, ZHANG TING-QING, TANG HUA-LIAN, LIU JIA-LU, LIU CHUAN -YANG, YAO YU-JUAN, PENG HONG-LUN, HE BAO-PING, ZHANG ZHENG-XUAN.TEMPERATURE EFFECTS OF γ-IRRADIATED METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT-TRAN SISTOR. Acta Physica Sinica, 2000, 49(7): 1331-1334.doi:10.7498/aps.49.1331 |
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